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STK30N2LLH5

P1-P3P4-P6P7-P9P10-P12P13-P13
Preliminary Data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
July 2008 Rev 1 1/13
13
STK30N2LLH5
N-channel 25 V, 0.0024 Ω, 30 A, PolarPAK
®
STripFET™V Power MOSFET
Features
■ Ultra low top and bottom junction to case
thermal resistance
■ R
DS(on)
* Q
g
industry benchmark
■ Extremely low on-resistance R
DS(on)
■
Very low switching gate charge
■ Fully encapsulated die
■ 100% matte tin finish (in compliance with the
2002/95/EC european directive)
■ High avalanche ruggedness
■ PolarPAK
®
is a trademark of VISHAY
Application
■ Switching applications
Description
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available R
DS(on)
*Q
g
, in this chip scale
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
Figure 1. Internal schematic diagram
Type
V
DSS
R
DS(on)
max
R
DS(on)
*Q
g
STK30N2LLH5 25 V < 0.0029 Ω 54 nC*mΩ
PolarPAK
®
Bottom View
Top View
Table 1. Device summary
Order code Marking Package Packaging
STK30N2LLH5 302L5
PolarPAK
®
Tape and reel
www.st.com
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Contents STK30N2LLH5
2/13
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
STK30N2LLH5 Electrical ratings
3/13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0)
25 V
V
GS
Gate-source voltage ± 20 V
I
D
(1)
1. When mounted on FR-4 board of 1inch
2
, 2 oz Cu and ≤ 10sec
Drain current (continuous) at T
C
= 25 °C
30 A
I
D
Drain current (continuous) at T
C
= 100 °C
18.75 A
I
DM
(2)
2. Pulse width limited by package
Drain current (pulsed) 120 A
P
TOT
(1)
Total dissipation at T
C
= 25 °C
5.2 W
Derating factor 0.0416 W/°C
E
AS
(3)
3. Starting T
J
= 25 °C, I
D
= 15 A, V
DD
= 25 V
Single pulse avalanche energy TBD J
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 3. Thermal data
Symbol Parameter Typ. Max. Unit
Rthj-amb
(1)
1. When mounted on FR-4 board of 1inch
2
, 2 oz Cu and ≤ 10sec
Thermal resistance junction-amb 20 24 °C/W
Rthj-c
(2)
2. Steady state
Thermal resistance junction-case (top drain) 1 1.2 °C/W
Rthj-c
(3)
3. Measured at source pin when the device is mounted on FR-4 board in steady state
Thermal resistance junction-case (source) 2.8 3.4 °C/W
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P12P13-P13

STK30N2LLH5

Mfr. #:
Buy STK30N2LLH5
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 25V 30A POLARPAK
Lifecycle:
New from this manufacturer.
Delivery:
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