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MC33275D-2.5G

P1-P3P4-P6P7-P9P10-P12P13-P14
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 20
1 Publication Order Number:
MC33275/D
MC33275, NCV33275
300 mA, Low Dropout
Voltage Regulator
The MC33275 series are micropower low dropout voltage
regulators available in a wide variety of output voltages as well as
packages, SOT−223, SOP−8, DPAK, and DFN 4x4 surface mount
packages. These devices feature a very low quiescent current and are
capable of supplying output currents up to 300 mA. Internal current
and thermal limiting protection are provided by the presence of a short
circuit at the output and an internal thermal shutdown circuit.
Due to the low input−to−output voltage differential and bias current
specifications, these devices are ideally suited for battery powered
computer, consumer, and industrial equipment where an extension of
useful battery life is desirable.
Features
• Low Input−to−Output Voltage Differential of 25 mV at I
O
= 10 mA,
and 260 mV at I
O
= 300 mA
• Extremely Tight Line and Load Regulation
• Stable with Output Capacitance of only 0.33 F for 2.5 V Output
Voltage
• Internal Current and Thermal Limiting
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These are Pb−Free Devices
Applications
• Battery Powered Consumer Products
• Hand−Held Instruments
• Camcorders and Cameras
Figure 1. Simplified Block Diagram
V
in
Thermal &
Anti−sat
Protection
54 K
Rint
This device contains 41 active transistors
1.23 V
V. Ref.
V
out
GND
LOW DROPOUT
MICROPOWER VOLTAGE
REGULATOR
SOIC−8
D SUFFIX
CASE 751
SOT−223
ST SUFFIX
CASE 318E
4
1
ORDERING INFORMATION
See detailed ordering and shipping information on page 10
of this data sheet.
xx = Voltage Version
A = Assembly Location
L = Wafer Lot
Y = Year
W, WW = Work Week
G or G = Pb−Free Device
(Note: Microdot may be in either location)
www.onsemi.com
MARKING
DIAGRAMS
3
DPAK
DT SUFFIX
CASE 369C
1
8
DFN−8, 4x4
MN SUFFIX
CASE 488AF
275xx
ALYWG
G
1
275xx
ALYWG G
1
8
1
AYW
275xxG
G
1
1
2
3
4
275xxG
ALYWW
MC33275, NCV33275
www.onsemi.com
2
PIN CONNECTIONS
GND
V
in
V
out
4
12 3
GND
GND
V
in
V
out
4
123
GND
Input
GND
GND
N/C
Output
GND
GND
N/C
Pins 4 and 5 Not Connected
MC33275ST
1
2
3
4
8
7
6
5
MC33275D
MC33275DT
4
3
2
1
5
6
7
8
Input
Input
Input
N/C
Output
N/C
GND
N/C
MC33275MN
MAXIMUM RATINGS
Rating Symbol Value Unit
Input Voltage V
CC
13 Vdc
Power Dissipation and Thermal Characteristics
T
A
= 25°C
Maximum Power Dissipation
Case 751 (SOIC−8) D Suffix
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Case 318E (SOT−223) ST Suffix
Thermal Resistance, Junction−to−Air
Thermal Resistance, Junction−to−Case
Case 369A (DPAK−3) DT Suffix
Thermal Resistance, Junction−to−Air
Thermal Resistance, Junction−to−Case
Case 488AF (DFN−8, 4x4) MN Suffix
Thermal Resistance, Junction−to−Air (with 1.0 oz PCB cu area)
Thermal Resistance, Junction−to−Air (with 1.8 oz PCB cu area)
Thermal Resistance, Junction−to−Case
P
D
R
JA
R
JC
R
JA
R
JC
R
JA
R
JC
R
JA
R
JA
psi−JC*
Internally Limited
160
25
245
15
92
6.0
183
93
9.0
W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Output Current I
O
300 mA
Maximum Junction Temperature T
J
150 °C
Operating Ambient Temperature Range T
A
− 40 to +125 °C
Storage Temperature Range T
stg
− 65 to +150 °C
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
ESD
4000
400
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*“C’’ (“case’’) is defined as the solder−attach interface between the center of the exposed pad on the bottom of the package, and the board to
which it is attached.
MC33275, NCV33275
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (C
L
= 1.0F, T
A
= 25°C, for min/max values T
J
= −40°C to +125°C, Note 1)
Characteristic
Symbol Min Typ Max Unit
Output Voltage I
O
= 0 mA to 250 mA
2.5 V Suffix T
A
= 25°C, V
in
= [V
O
+ 1] V
3.0 V Suffix
3.3 V Suffix
5.0 V Suffix
2.5 V Suffix V
in
= [V
O
+ 1] V, 0 < I
O
< 100 mA
3.0 V Suffix 2% Tolerance from T
J
= −40 to +125°C
3.3 V Suffix
5.0 V Suffix
V
O
2.475
2.970
3.267
4.950
2.450
2.940
3.234
4.900
2.50
3.00
3.30
5.00
−
−
−
−
2.525
3.030
3.333
5.05
2.550
3.060
3.366
5.100
Vdc
Line Regulation V
in
= [V
O
+ 1] V to 12 V, I
O
= 250 mA,
All Suffixes T
A
= 25°C
Reg
line
− 2.0 10 mV
Load Regulation V
in
= [V
O
+ 1] V, I
O
= 0 mA to 250 mA,
All Suffixes T
A
= 25°C
Reg
load
− 5.0 25 mV
Dropout Voltage
I
O
= 10 mA T
J
= −40°C to +125°C
I
O
= 100 mA
I
O
= 250 mA
I
O
= 300 mA
V
in
− V
O
−
−
−
−
25
115
220
260
100
200
400
500
mV
Ripple Rejection (120 Hz) V
in(peak−peak)
= [V
O
+ 1.5] V to [V
O
+ 5.5] V − 65 75 − dB
Output Noise Voltage
C
L
= 1.0 FI
O
= 50 mA (10 Hz to 100 kHz)
C
L
= 200 F
V
n
−
−
160
46
−
−
Vrms
CURRENT PARAMETERS
Quiescent Current ON Mode V
in
= [V
O
+ 1] V, I
O
= 0 mA I
QOn
− 125 200
A
Quiescent Current ON Mode SAT V
in
= [V
O
− 0.5] V, I
O
= 0 mA (Notes 2, 3)
3.0 V Suffix
3.3 V Suffix
5.0 V Suffix
I
QSAT
−
−
−
1500
1500
1500
2000
2000
2000
A
Current Limit V
in
= [V
O
+ 1] V, V
O
Shorted I
LIMIT
− 450 − mA
THERMAL SHUTDOWN
Thermal Shutdown
− − 150 − °C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
2. Quiescent Current is measured where the PNP pass transistor is in saturation. V
in
= [V
O
− 0.5] V guarantees this condition.
3. For 2.5 V version, I
QSAT
is constrained by the minimum input voltage of 2.5 V.
P1-P3P4-P6P7-P9P10-P12P13-P14

MC33275D-2.5G

Mfr. #:
Buy MC33275D-2.5G
Manufacturer:
ON Semiconductor
Description:
LDO Voltage Regulators 2.5V 300mA
Lifecycle:
New from this manufacturer.
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