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VS-182NQ030PBF

P1-P3P4-P6
VS-182NQ030PbF
www.vishay.com
Vishay Semiconductors
Revision: 19-Mar-15
1
Document Number: 94460
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 180 A
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Designed and qualified for industrial level
• UL approved file E222165
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-182NQ.. high current Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in high current switching power supplies,
plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
PRODUCT SUMMARY
I
F(AV)
180 A
V
R
30 V
Package HALF-PAK (D-67)
Circuit Single diode
Lug terminal
anode
Base
cathode
HALF-PAK (D-67)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 180 A
V
RRM
30 V
I
FSM
t
p
= 5 μs sine 20 000 A
V
F
180 A
pk
, T
J
= 125 °C 0.45 V
T
J
Range -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-182NQ030PbF UNITS
Maximum DC reverse voltage V
R
30 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 108 °C, rectangular waveform 180
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
20 000
10 ms sine or 6 ms rect. pulse 2500
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 18 A, L = 1 mH 162 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
36 A
VS-182NQ030PbF
www.vishay.com
Vishay Semiconductors
Revision: 19-Mar-15
2
Document Number: 94460
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width = 500 μs
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
180 A
T
J
= 25 °C
0.59
V
360 A 0.8
180 A
T
J
= 125 °C
0.45
360 A 0.65
Maximum reverse leakage current
See fig. 2
I
RM
T
J
= 25 °C
V
R
= Rated V
R
15
mA
T
J
= 125 °C 840
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 7700 pF
Typical series inductance L
S
From top of terminal hole to mounting plane 6.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to 150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
0.28
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.05
Approximate weight
30 g
1.06 oz.
Mounting torque
minimum
Non-lubricated threads
3 (26.5)
N · m
(lbf · in)
maximum 4 (35.4)
Terminal torque
minimum 3.4 (30)
maximum 5 (44.2)
Case style HALF-PAK module
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
00.80.4 1.20.60.2 1.0 1.4 1.6
1
1000
100
10
94460_01
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
0 5 10 15 2520 30
0.01
0.1
1
10
100
10 000
1000
94460_02
T
J
= 125 °C
T
J
= 150 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
VS-182NQ030PbF
www.vishay.com
Vishay Semiconductors
Revision: 19-Mar-15
3
Document Number: 94460
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
01020515 3025 35
1000
10 000
94460_03
T
J
= 25 °C
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
10
94460_04
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
20015010050 250
350300
0
100
140
150
160
60
80
90
120
130
110
70
94460_05
Square wave (D = 0.50)
80 % rated V
R
applied
See note (1)
DC
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
300250200100 15050
350
0
160
180
0
80
120
40
140
60
100
20
94460_06
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
P1-P3P4-P6

VS-182NQ030PBF

Mfr. #:
Buy VS-182NQ030PBF
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 180 Amp 30 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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