IXTP24N65X2M Datasheet IXTP24N65X2M | P1-P3

DS100696B(4/18)

X2-Class

Power MOSFET

N-Channel Enhancement Mode

IXTP24N65X2M

V

DSS

= 650V

I

D25

= 24A

R

DS(on)



 145m





Features



International Standard Package



Plastic Overmolded Tab



Low R

DS(ON)

and Q

G



Avalanche Rated



Low Package Inductance

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



PFC Circuits



AC and DC Motor Drives



Robotics and Servo Controls

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 250μA 650 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250μA 3.0 5.0 V

I

GSS

V

GS

= 30V, V

DS

= 0V 100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 5 A

T

J

= 125C 100 A

R

DS(on)

V

GS

= 10V, I

D

= 12A, Note 1 145 m

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25C to 150C 650 V

V

DGR

T

J

= 25C to 150C, R

GS

= 1M 650 V

V

GSS

Continuous 30 V

V

GSM

Transient 40 V

I

D25

T

C

= 25C, Limited by T

JM

24 A

I

DM

T

C

= 25C, Pulse Width Limited by T

JM

48 A

I

A

T

C

= 25C12A

E

AS

T

C

= 25C 600 mJ

dv/dt I

S

 I

DM

, V

DD

 V

DSS

, T

J

 150°C 15 V/ns

P

D

T

C

= 25C37W

T

J

-55 ... +150 C

T

JM

150 C

T

stg

-55 ... +150 C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque 1.13 / 10 Nm/lb.in

Weight 2.5 g

G = Gate D = Drain

S = Source

OVERMOLDED

TO-220

G

D

S

(Electrically Isolated Tab)

Isolated Tab

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTP24N65X2M

Note 1. Pulse test, t  300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max

I

S

V

GS

= 0V 24 A

I

SM

Repetitive, pulse Width Limited by T

JM

96 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.4 V

t

rr

390 ns

Q

RM

3.3 μC

I

RM

17 A

I

F

= 12A, -di/dt = 100A/μs

V

R

= 100V

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max

g

fs

V

DS

= 10V, I

D

= 12A, Note 1 13 22 S

R

Gi

Gate Input Resistance 1.1 

C

iss

2060 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 1470 pF

C

rss

1.2 pF

C

o(er)

83 pF

C

o(tr)

336 pF

t

d(on)

20 ns

t

r

25 ns

t

d(off)

50 ns

t

f

19 ns

Q

g(on)

36 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 12A 9 nC

Q

gd

13 nC

R

thJC

3.37 C/W

R

thCS

0.50 C/W

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 12A

R

G

= 10 (External)

Effective Output Capacitance

Energy related

Time related

V

GS

= 0V

V

DS

= 0.8 • V

DSS

Terminals: 1 - Gate

2 - Drain

3 - Source

1

2

3

OVERMOLDED TO-220

(IXTP...M)

oP

IXTP24N65X2M

Fig. 1. Output Characteristics @ T

J

= 25

o

C

0

4

8

12

16

20

24

00.511.522.533.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

6V

7V

5V

Fig. 3. Output Characteristics @ T

J

= 125

o

C

0

4

8

12

16

20

24

0123456789

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

5V

6V

4V

7V

Fig. 4. R

DS(on)

Normalized to I

D

= 12A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

3.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 12A

I

D

= 24A

Fig. 5. R

DS(on)

Normalized to I

D

= 12A Value vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

3.8

4.2

4.6

0 5 10 15 20 25 30 35 40 45 50 55

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125

o

C

T

J

= 25

o

C

Fig. 2. Extended Output Characteristics @ T

J

= 25

o

C

0

10

20

30

40

50

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

8V

Fig. 6. Normalized Breakdown & Threshold Voltages

vs. Junction Temperature

0.6

0.7

0.8

0.9

1.0

1.1

1.2

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

- Degrees Centigrade

BV

DSS

/ V

GS(th)

- Normalized

BV

DSS

V

GS(th)

IXTP24N65X2M

IXTP24N65X2M

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