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© 2004 IXYS All rights reserved
FMD 80-0045PS
418
IXYS reserves the right to change limits, test conditions and dimensions.
I
D25
= 100 A
V
DSS
= 55 V
R
DSon (typ.)
= 3.8 m
ΩΩ
ΩΩ
Ω
Boost Chopper
with Trench Power MOSFET
and Schottky Diode
in ISOPLUS i4-PAC
TM
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5
Features
• trench MOSFET
- very low on state resistance R
DSon
- fast switching
• Schottky diode
- low forward voltage
- extremely fast switching
- blocking capability optimized for
elevated temperature
• ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
• automotive
- choppers - replacing series resistors
for DC drives, heating etc.
- control of SR drives
- DC-DC converters
- electronic switches -replacing relays
and fuses
• power supplies
- DC-DC converters
- solar inverters
• battery supplied systems
- choppers for drives in hand held tools
- battery chargers
MOSFET
Symbol Conditions Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C 55 V
V
GS
±20 V
I
D25
T
C
= 25°C 150 A
I
D90
T
C
= 90°C 110 A
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
R
DSon
V
GS
= 10 V;
I
D
= I
D90
3.8 4.9 mΩ
V
GSth
V
DS
= 20 V;
I
D
= 1 mA 2 4 V
I
DSS
V
DS
= 55V;
V
GS
= 0 V; T
VJ
= 25°C 1 µA
T
VJ
= 125°C 0.1 mA
I
GSS
V
GS
= ±20 V; V
DS
= 0 V 0.2 µA
Q
g
86 nC
Q
gs
18 nC
Q
gd
25 nC
t
d(on)
25 ns
t
r
50 ns
t
d(off)
70 ns
t
f
40 ns
R
thJC
1K/W
R
thJH
with heat transfer paste 1.5 K/W
V
GS
= 10 V; V
DS
= 44 V; I
D
= 25 A
V
GS
= 10 V; V
DS
= 30 V;
I
D
= 25A; R
G
= 10 Ω
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Preliminary data
