NTF2955T1G

NTF2955, NVF2955
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
10 10 155020525
R
DS(on)
LIMIT
V
GS
100
1
0.01
1000
10
1
12
4
2
0
100
50
0
5
0
1000
800
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
600
400
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. GatetoSource and
DraintoSource Voltage versus Total Charge
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
R
G
, GATE RESISTANCE (W)
Figure 10. Diode Forward Voltage versus Current
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (AMPS)
E
AS
, SINGLE PULSE DRAINTOSOURCE
AVALANCHE ENERGY (mJ)
0108416
1 10 100 0 0.50.25
0.1 10 1001 25 125 15010075 17550
I
D
= 1.5 A
T
J
= 25°C
V
GS
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25°C
C
rss
C
iss
C
oss
C
rss
1
0.75 1
C
iss
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
V
DD
= 25 V
I
D
= 1.5 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 25°C
I
PK
= 6.7 A
1 ms
100 ms
10 ms
dc
t
r
t
d(off)
t
d(on)
V
DS
1.75
150
200
250
Q
GD
Q
T
0
62
t
f
THERMAL LIMIT
PACKAGE LIMIT
200
1200
6
10
8
10
2
1.25 1.5
100
3
4
10 ms
1412
60
20
10
0
30
40
50
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
Q
GS
V
DS
0.1
NTF2955, NVF2955
http://onsemi.com
5
10
1
0.001
1001010.10.001 1000
r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
RESISTANCE (NORMALIZED)
t, TIME (s)
Cu area 727 mm
2
, 1 oz. thick traces
Figure 13. Thermal Response
0.1
0.01
0.010.00010.000001
100
0.00001
Single Pulse
D = 0.5
0.2
0.1
0.05
0.02
0.01
NTF2955, NVF2955
http://onsemi.com
6
PACKAGE DIMENSIONS
SOT223 (TO261)
CASE 318E04
ISSUE N
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059
ǒ
mm
inches
Ǔ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT*
H
E
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b 0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c 0.24 0.29 0.35 0.009
D 6.30 6.50 6.70 0.249
E 3.30 3.50 3.70 0.130
e 2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264
0.069 0.078
0.276 0.287
H
E
e1
0° 10° 0° 10°
q
q
L
L 0.20 −−− −−− 0.008 −−− −−−
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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NTF2955T1G

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Manufacturer:
ON Semiconductor
Description:
MOSFET -60V 2.6A P-Channel
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