STPS16L40CT

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STPS16L40CT
July 2003 - Ed : 6A
LOW DROP POWER SCHOTTKY RECTIFIER
®
Dual center tap Schottky barrier rectifier designed
for high frequency Switched Mode Power Supplies
and high frequency DC to DC converters.
Packaged in TO-220AB this device is intended for
use in low voltage, high frequency converters,
free-wheeling and polarity protection applications.
DESCRIPTION
LOW FORWARD VOLTAGE DROP FOR LESS
POWER DISSIPATION
NEGLIGIBLE SWITCHING LOSSES ALLOWING
HIGH FREQUENCY OPERATION
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
40 V
I
F(RMS)
RMS forward current
30 A
I
F(AV)
Average forward current
Tc = 140°C
Per diode
8A
δ= 0.5
Per device
16 A
I
FSM
Surge non repetitive forward current tp = 10 ms sinusoidal
180 A
I
RRM
Repetitive peak reverse current tp=2µs square F=1kHz
1A
I
RSM
Non repetitive peak reverse current tp = 100 µs square
2A
P
ARM
Repetitive peak avalanche power tp = 1µs Tj = 25°C
4000 W
T
stg
Storage temperature range
-65 to+150 °C
Tj
Maximum operating junction temperature *
150 °C
dV/dt
Critical rate of rise of reverse voltage
10000 V/µs
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2x8A
V
RRM
40 V
Tj (max) 150 °C
V
F
(max) 0.45 V
MAIN PRODUCTS CHARACTERISTICS
K
A1
A2
TO-220AB
A1
K
A2
*:
dPtot
dTj Rth j a
<
1
()
thermal runaway condition for a diode on its own heatsink
STPS16L40CT
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Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
*
Reverse leakage cur-
rent
Tj=25°CV
R
=V
RRM
0.7 mA
Tj = 100°C
15 35 mA
V
F
*
Forward voltage drop Tj = 25°CI
F
=8A
0.5 V
Tj = 125°CI
F
=8A
0.39 0.45
Tj=25°CI
F
=16A
0.63
Tj = 125°CI
F
=16A
0.55 0.64
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.26xI
F(AV)
+ 0.024 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode
Total
2.2
1.3
°C/W
R
th(c)
Coupling 0.3
THERMAL RESISTANCES
012345678910
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
IF(av) (A)
PF(av)(W)
T
δ
=tp/T
tp
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0 25 50 75 100 125 150
0
1
2
3
4
5
6
7
8
9
IF(av)(A)
Rth(j-a)=15°C/W
Rth(j-a)=Rth(j-c)
Tamb(°C)
T
δ
=tp/T
tp
Fig. 2: Average current versus ambient
temperature (δ = 0.5) (per diode).
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0
0.2
0.4
0.6
0.8
1
1.2
0 25 50 75 100 125 150
T (°C)
j
P(t)
P (25°C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS16L40CT
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1E-3 1E-2 1E-1 1E+0
0
20
40
60
80
100
120
IM(A)
Tc=75°C
Tc=25°C
Tc=125°C
t(s)
IM
t
δ=0.5
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values) (per
diode).
1E-4 1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
T
δ
=tp/T
tp
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration .
0 5 10 15 20 25 30 35 40
1E-2
1E-1
1E+0
1E+1
1E+2
2E+2
IR(mA)
Tj=125°C
Tj=75°C
Tj=25°C
Tj=150°C
VR(V)
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
12 51020 50
100
200
500
1000
2000
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.1
1.0
10.0
100.0
IFM(A)
Typical values
Tj=150°C
Tj=125°C
Tj=25°C
Tj=75°C
VFM(V)
Fig. 9: Forward voltage drop versus forward
current (maximum values) (per diode).

STPS16L40CT

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
DIODE ARRAY SCHOTTKY 40V TO220AB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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