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BCV63B,215

P1-P3P4-P6P7-P9P10-P12P13-P13
BCV63_63B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 4 August 2010 3 of 12
NXP Semiconductors
BCV63; BCV63B
NPN general-purpose double transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
6. Thermal characteristics
[1] Device mounted on an FR4 PCB.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 100 mA
I
CM
peak collector current - 200 mA
I
B
base current - 100 mA
Transistor TR1
V
CBO
collector-base voltage open emitter - 30 V
V
CEO
collector-emitter voltage open base - 30 V
Transistor TR2
V
CBO
collector-base voltage open emitter - 6 V
V
CEO
collector-emitter voltage open base - 6 V
Per device
P
tot
total power dissipation T
amb
25 C
[1]
-250mW
T
j
junction temperature - 150 C
T
amb
ambient temperature 65 +150 C
T
stg
storage temperature 65 +150 C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 500 K/W
BCV63_63B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 4 August 2010 4 of 12
NXP Semiconductors
BCV63; BCV63B
NPN general-purpose double transistors
7. Characteristics
[1] Group selection will be done on TR1. Due to matched dies, h
FE
values for TR2 are the same as for TR1.
[2] V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
[3] V
BE
decreases by about 2 mV/K with increasing temperature.
Table 8. Characteristics
T
j
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base
cut-off current
V
CB
=30V; I
E
=0A - - 15 nA
V
CB
=30V; I
E
=0A;
T
j
= 150 C
--5A
V
CEsat
collector-emitter
saturation voltage
I
C
=10mA;
I
B
=0.5mA
-75300mV
V
BEsat
base-emitter
saturation voltage
I
C
=10mA;
I
B
=0.5mA
[2]
- 700 - mV
Transistor TR1
h
FE
DC current gain V
CE
=5V; I
C
=2mA
BCV63 110 - 800
BCV63B 200 - 450
V
CEsat
collector-emitter
saturation voltage
I
C
=100mA; I
B
= 5 mA - 250 650 mV
V
BEsat
base-emitter
saturation voltage
I
C
=100mA; I
B
=5mA
[2]
- 850 - mV
V
BE
base-emitter voltage I
C
=2mA; V
CE
=5V
[3]
600 650 750 mV
I
C
=10mA; V
CE
=5V
[3]
--820mV
f
T
transition frequency V
CE
=5V; I
C
=10mA;
f=100MHz
100 - - MHz
C
c
collector capacitance V
CB
=10V;
I
E
=i
e
=0A; f=1MHz
-4-pF
Transistor TR2
h
FE
DC current gain V
CE
=700mV;
I
C
=2mA
[1]
BCV63 110 - 800
BCV63B 200 - 450
V
CEsat
collector-emitter
saturation voltage
I
C
=100mA; I
B
= 5 mA - 250 - mV
V
BE
base-emitter voltage I
C
=2mA;
V
CE
=700mV
[3]
- 700 - mV
BCV63_63B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 4 August 2010 5 of 12
NXP Semiconductors
BCV63; BCV63B
NPN general-purpose double transistors
V
CE
=5V
(1) T
amb
= 150 C
(2) T
amb
=25C
(3) T
amb
= 55 C
V
CE
=5V
(1) T
amb
= 55 C
(2) T
amb
=25C
(3) T
amb
= 150 C
Fig 1. BCV63B: DC current gain as a function of
collector current; typical values
Fig 2. BCV63B: Base-emitter voltage as a function of
collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 150 C
(2) T
amb
=25C
(3) T
amb
= 55 C
I
C
/I
B
=10
(1) T
amb
= 55 C
(2) T
amb
=25C
(3) T
amb
= 150 C
Fig 3. BCV63B: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 4. BCV63B: Base-emitter saturation voltage as a
function of collector current; typical values
mgt727
10
−1
11010
2
10
3
I
C
(mA)
0
600
500
400
300
200
100
h
FE
(1)
(2)
(3)
0
1200
1000
800
600
400
200
mgt728
10
−2
10
−1
11010
2
10
3
I
C
(mA)
V
BE
(mV)
(1)
(2)
(3)
10
4
10
3
10
2
10
mgt729
10
−1
11010
2
10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)
(3)
mgt730
10
−1
11010
2
10
3
I
C
(mA)
0
1200
1000
800
600
400
200
V
BEsat
(mV)
(1)
(2)
(3)
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BCV63B,215

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Nexperia
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Bipolar Transistors - BJT TRANS GP TAPE-7
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