KSC2883YTF Datasheet KSC2883OTF, KSC2883YTF | P1-P3

KSC2883 Rev. B3

KSC2883 NPN Epitaxial Silicon Transistor

tm

November 2006

KSC2883

NPN Epitaxial Silicon Transistor

Low Frequency Power Amplifier

• 3W Output Application

• Collector Dissipation : P

C

=1~2W in Mounted on Ceramic Board

• Complement to KSA1203

Absolute Maximum Ratings T

a

= 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Mounted on Ceramic Board (250mm

2

x0.8mm)

Electrical Characteristics * T

a

= 25°C unless otherwise noted

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 30 V

V

CEO

Collector-Emitter Voltage 30 V

V

EBO

Emitter-Base Voltage 5 V

I

C

Collector Current 1.5 A

I

B

Base Current 0.3 A

P

C

P

C

*

Collector Power Dissipation 500

1,000

mW

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= 10µA, I

B

= 0 30 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= 1mA, I

C

= 0 5 V

I

CBO

Collector Cut-off Current V

CB

= 30V, I

E

= 0 100 nA

I

EBO

Emitter Cut-off Current V

BE

= 5V, I

C

= 0 100 nA

h

FE

DC Current Gain V

CE

= 2V, I

C

= 500mA 100 320

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= 1.5A, I

B

= 30mA 2.0 V

V

BE

(on) Base-Emitter On Voltage V

CE

= 2V, I

C

= 500mA 1.0 V

f

T

Current Gain Bandwidth Product V

CE

= 2V, I

C

= 500mA 120 MHz

C

ob

Output Capacitance V

CB

= 10V, I

E

= 0, f = 1MHz 40 pF

SOT-89

1

1. Base 2. Collector 3. Emitter

28 83

PY WW

h

FE

grage

Year code

Weekly code

Marking

2 www.fairchildsemi.com

KSC2883 Rev. B3

KSC2883 NPN Epitaxial Silicon Transistor

h

FE

Classification

Package Marking and Ordering Information

Classification O Y

h

FE

100 ~ 200 160 ~ 320

Device Marking Device Package Reel Size Tape Width Quantity

2883 KSC2883 SOT-89 13” -- 4,000

3 www.fairchildsemi.com

KSC2883 Rev. B3

KSC2883 NPN Epitaxial Silicon Transistor

Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. Base-Emitter On Voltage

Figure 3. DC Current Gain

Figure 4. Collector-Emitter Saturation Voltage

Figure 5. Safe Operating Area

Figure 6. Power Derating

0246810121416

0.0

0.4

0.8

1.2

1.6

I

B

= 10mA

I

B

= 8mA

I

B

= 6mA

I

B

= 5mA

I

B

= 4mA

I

B

= 3mA

I

B

= 2mA

I

B

= 1mA

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.0 0.4 0.8 1.2 1.6

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

V

CE

= 2V

I

C

[A], COLLECTOR CURRENT

V

BE

[V], Turn On VOLTAGE

1 10 100 1000 10000

1

10

100

1000

10000

V

CE

= 2V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

10 100 1000

0.01

0.1

1

Ic=10*Ib

VCE

(SAT)

, Collector-Emitter Voltage(V)

I

C

[mA], COLLECTOR CURRENT

0.1 1 10 100

0.01

0.1

1

10

V

CEO

MAX.

1ms

10ms

100ms

1s

I

C

MAX. (DC)

I

C

MAX. (Pulse)

Ta = 25

o

C

Single Pulse

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLATGE

0 50 100 150 200

0.0

0.4

0.8

1.2

1.6

M

o

u

n

t

e

d

o

n

C

e

r

a

m

i

c

B

o

a

r

d

(

2

5

0

m

2

x

0

.

8

m

)

P

C

[W], POWER DISSIPATION

T

A

[

o

C], AMBIENT TEMPERATURE

KSC2883YTF

KSC2883YTF

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