TLP290
2014-09-08
1
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TLP290
Programmable Controllers
AC/DC-Input Module
Hybrid ICs
TLP290 consist of photo transistor, optically coupled to two gallium arsenide
infrared emitting diodes connected inverse parallel, and can operate directly
by AC input current
Since TLP290 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C)
and high isolation voltage (3750Vrms), it’s suitable for high-density surface
mounting applications such as programmable controllers and hybrid ICs.
Collector-Emitter voltage : 80 V (min)
Current transfer ratio : 50% (min)
Rank GB : 100% (min)
Isolation voltage : 3750 Vrms (min)
Guaranteed performance over -55 to 110 ˚C
UL recognized : UL1577, File No. E67349
cUL approved : CSA Component Acceptance Service No.5A,
File No. 67349
SEMKO approved : EN 60065: 2002, Approved no. 1200315
EN 60950-1: 2001, EN 60335-1: 2002,
Approved no. 1200315
BSI approved : BS EN 60065: 2002, Approved no. 9036
: BS EN 60950-1: 2006, Approved no. 9037
Option (V4)
VDE approved: EN 60747-5-5 Certificate, No. 40009347
Maximum operating insulation voltage: 707 Vpk
Highest permissible over-voltage: 6000 Vpk
(Note) When an EN 60747-5-5 approved type is needed,
please designate the “Option(V4)”
Construction Mechanical Rating
Creepage distance : 5.0 mm (min)
Clearance : 5.0 mm (min)
Insulation thickness : 0.4 mm (min)
TOSHIBA 11-3C1
Weight: 0.05 g (typ.)
32
41
TLP290
1: Anode
Cathode
2: Cathode
Anode
3: Emitter
4: Collector
Pin Configuration
Unit: mm
Start of commercial production
2012/02
TLP290
2014-09-08
2
Current Transfer Ratio (Unless otherwise specified, Ta = 25°C)
Note1: Specify both the part number and a rank in this format when ordering
(e.g.) rank GB: TLP290(GB,E
Note: For safety standard certification, however, specify the part number alone.
(e.g.) TLP290(GB,E: TLP290
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25°C)
Characteristic Symbol
Note Rating
Unit
LED
R.M.S. forward current I
F(RMS)
±50 mA
Input forward current derating (Ta 90°C) I
F
/Ta -1.5 mA /°C
Input forward current (pulsed) I
FP
(Note 2) ±1 A
Input power dissipation P
D
100 mW
Input power dissipation derating (Ta 90°C) P
D
/Ta -3.0 mW/°C
Junction temperature T
j
125 °C
Detector
Collector-emitter voltage V
CEO
80 V
Emitter-collector voltage V
ECO
7 V
Collector current I
C
50 mA
Collector power dissipation P
C
150 mW
Collector power dissipation derating (Ta 25°C) P
C
/Ta -1.5 mW /°C
Junction temperature T
j
125 °C
Operating temperature range T
opr
-55 to 110 °C
Storage temperature range T
stg
-55 to 125 °C
Lead soldering temperature T
sol
260 (10s) °C
Total package power dissipation P
T
200 mW
Total package power dissipation derating (Ta 25°C) P
T
/Ta -2.0 mW /°C
Isolation voltage BV
S
(Note3) 3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2: Pulse width 100μs, frequency 100Hz
Note3: AC, 1minute, R.H. 60%, Device considered a two terminal device: LED side pins shorted together and
detector side pins shorted together.
TYPE
Classification
(Note1)
Current Transfer Ration (%)
(I
C
/ I
F
)
Marking of Classification
I
F
= 5 mA, V
CE
= 5 V, Ta = 25°C
Min Max
TLP290
Blank 50 400
Blank, YE, GR, B, GB
Rank Y 50 150 YE
Rank GR 100 300 GR
Rank BLL 200 400 B
Rank GB 100 400 GB
TLP290
2014-09-08
3
Electrical Characteristics (Unless otherwise specified, Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
LED
Input forward voltage V
F
I
F
= ±10 mA 1.1 1.25 1.4 V
Input capacitance C
T
V = 0 V, f = 1 MHz - 60 - pF
Detector
Collector-emitter breakdown voltage V
(BR) CEO
I
C
= 0.5 mA 80 - - V
Emitter-collector breakdown voltage V
(BR) ECO
I
E
= 0.1 mA 7 - - V
Dark current I
CEO
V
CE
= 48 V - 0.01 0.08 μA
V
CE
= 48 V, Ta = 85°C - 2 50 μA
Collector-emitter capacitance C
CE
V = 0 V, f = 1 MHz - 10 - pF
Coupled Electrical Characteristics
(Unless otherwise specified, Ta = 25°C)
Characteristic Symbol Test Condition MIn Typ. Max Unit
Current transfer ratio I
C
/ I
F
I
F
= ±5 mA, V
CE
= 5 V
Rank GB
50 - 400
%
100 - 400
Saturated CTR I
C
/ I
F (sat)
IF = ±1 mA, V
CE
= 0.4 V
Rank GB
- 60 -
%
30 - -
Collector-emitter
saturation voltage
V
CE (sat)
I
C
= 2.4 mA, I
F
= ±8 mA - - 0.3
V
I
C
= 0.2 mA, I
F
= ±1 mA
Rank GB
- 0.2 -
- - 0.3
Off-state collector current I
C(off)
V
F
= ± 0.7 V, V
CE
= 48 V - - 10 μA
Collector current ratio I
C (ratio)
I
C
(I
F
= -5 mA) / I
C
(I
F
= 5 mA)
(Fig.1)
0.33 - 3 -
Fig.1: Collector current ratio test circuit
5V)
CE
V,
F1
I
F
(I
C1
I
5V)
CE
V,
F2
I
F
(I
C2
I
C(ratio)
I
==
==
=
V
CE
I
C1
I
C2
I
F1
I
F2

TLP290(GB-TP,E)

Mfr. #:
Manufacturer:
Toshiba
Description:
Transistor Output Optocouplers Photocoupler 80V 50mA 3750Vrms
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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