IRF9540NSPBF

P1-P3 P4-P6 P7-P9 P10-P11

IRF9540NS/LPbF

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 10 100

-V

DS

, Drain-to-Source Voltage (V)

100

1000

10000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

C

oss

C

rss

C

iss

0 20406080100120

Q

G

,

Total Gate Charge (nC)

0

4

8

12

16

20

-

V

G

S

,

G

a

t

e

-

t

o

-

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

)

V

DS

= -80V

V

DS

= -50V

V

DS

= -20V

I

D

= -14A

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

-V

SD

, Source-to-Drain Voltage (V)

0.1

1

10

100

-

I

S

D

,

R

e

v

e

r

s

e

D

r

a

i

n

C

u

r

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 150°C

V

GS

= 0V

1 10 100 1000

-V

DS

, Drain-toSource Voltage (V)

0.1

1

10

100

1000

-

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

r

e

n

t

(

A

)

Tc = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R

DS

(on)

100µsec

IRF9540NS/LPbF

www.irf.com 5

1E-006 1E-005 0.0001 0.001 0.01 0.1

t

1

, Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

T

h

e

r

m

a

l

R

e

s

p

o

n

s

e

(

Z

t

h

J

C

)

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current vs.

Case Temperature

V

DS

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

V

DD

R

G

D.U.T.

+

-

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

25 50 75 100 125 150

T

C

, Case Temperature (°C)

0

4

8

12

16

20

24

-

I

D

,

D

r

a

i

n

C

u

r

r

e

n

t

(

A

)

Ri (°C/W)

τi (sec)

0.1737838 0.0000610

0.4335992 0.0019590

0.4921007 0.0260060

τ

J

τ

J

τ

1

τ

1

τ

2

τ

2

τ

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

τ

C

Ci

i

/

Ri

Ci= τi/Ri

IRF9540NS/LPbF

6 www.irf.com

Fig 14b. Gate Charge Test Circuit

Fig 14a. Basic Gate Charge Waveform

Fig 13. Maximum Avalanche Energy

vs. Drain Current

Q

G

Q

GS

Q

GD

V

G

Charge

-10V

D.U.T.

V

DS

I

D

I

G

-3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

t

p

V

(

BR

)

DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

V

DD

DRIVER

A

15V

-20V

25 50 75 100 125 150

Starting T

J

, Junction Temperature (°C)

0

50

100

150

200

250

300

350

E

A

S

,

S

i

n

g

l

e

P

u

l

s

e

A

v

a

l

a

n

c

h

e

E

n

e

r

g

y

(

m

J

)

I

D

TOP -6.7A

-9.6A

BOTTOM -14A

P1-P3 P4-P6 P7-P9 P10-P11

IRF9540NSPBF

Mfr. #:

Buy IRF9540NSPBF

Manufacturer:

Infineon Technologies

Description:

MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC

Lifecycle:

New from this manufacturer.

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