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IRF9540NSTRRPBF

P1-P3P4-P6P7-P9P10-P11
IRF9540NSPbF
IRF9540NLPbF
HEXFET
®
Power MOSFET
PD - 96030
V
DSS
= -100V
R
DS(on)
= 117mΩ
I
D
= -23A
l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Some Parameters are Different from
IRF9540NS/L
l P-Channel
l Lead-Free
09/30/05
S
D
G
www.irf.com 1
D
2
Pak
IRF9540NSPbF
TO-262
IRF9540NLPbF
S
G
S
D
G
D
GDS
Gate Drain Source
Description
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.
D
D
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V A
I
D
@ T
C
= 100°C
Continuous Drain Current, VGS @ -10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation W
P
D
@T
C
= 25°C
Maximum Power Dissipation
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Peak Diode Recovery dv/dt
V/ns
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case –––
1.1
°C/W
R
θJA
Junction-to-Ambient (PCB Mount, steady state)
––– 40
110
0.9
± 20
11
84
-14
300 (1.6mm from case )
-55 to + 150
-13
Max.
-23
-14
-92
3.1
IRF9540NS/LPbF
2 www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
Starting T
J
= 25°C, L = 0.88mH
R
G
= 25Ω, I
AS
= -14A. (See Figure 12)
I
SD
≤ -14A, di/dt ≤ -620A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1" square PCB (FR-4or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage -100 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 117
mΩ
V
GS(th)
Gate Threshold Voltage -2.0 ––– -4.0 V
gfs Forward Transconductance 5.6 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– -50 µA
––– ––– -250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Q
g
Total Gate Charge ––– 73 110 nC
Q
gs
Gate-to-Source Charge ––– 13 20
Q
gd
Gate-to-Drain ("Miller") Charge ––– 38 57
t
d(on)
Turn-On Delay Time ––– 13 ––– ns
t
r
Rise Time ––– 64 –––
t
d(off)
Turn-Off Delay Time ––– 40 –––
t
f
Fall Time ––– 45 –––
L
D
Internal Drain Inductance ––– 4.5 ––– nH Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
C
iss
Input Capacitance ––– 1450 ––– pF
C
oss
Output Capacitance ––– 430 –––
C
rss
Reverse Transfer Capacitance ––– 230 –––
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– -23
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– -92
(Body Diode)
V
SD
Diode Forward Voltage
––– ––– -1.6 V
t
rr
Reverse Recovery Time
––– 140 210 ns
Q
rr
Reverse Recovery Charge ––– 890 1340 nC
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -100V, V
GS
= 0V
V
DS
= -80V, V
GS
= 0V, T
J
= 125°C
Conditions
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -14A
T
J
= 25°C, I
F
= -14A, V
DD
= -25V
di/dt = -100A/µs
T
J
= 25°C, I
S
= -14A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= -10V
MOSFET symbol
V
GS
= 0V
V
DS
= -25V
Conditions
ƒ = 1.0MHz, See Fig. 5
R
G
= 5.1Ω
I
D
= -14A
V
DS
= -50V, I
D
= -14A
V
DD
= -50V
I
D
= -14A
V
GS
= -20V
V
GS
= 20V
V
DS
= -80V
V
GS
= -10V
IRF9540NS/LPbF
www.irf.com 3
Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
≤60µs PULSE WIDTH
Tj = 25°C
-4.5V
2 4 6 8 10 12 14
-V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= -50V
≤
60µs PULSE WIDTH
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
≤60µs PULSE WIDTH
Tj = 150°C
-4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= -14A
V
GS
= -10V
P1-P3P4-P6P7-P9P10-P11

IRF9540NSTRRPBF

Mfr. #:
Buy IRF9540NSTRRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC
Lifecycle:
New from this manufacturer.
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