©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
KSA642
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
* PW≤10ms, Duty cycle≤50%
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: PW≤350µs, Duty cycle≤2%
h
FE
Classification
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage -30 V
V
CEO
Collector-Emitter Voltage -25 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current (DC) -300 mA
I
CP
* Collector Current (Pulse) -500 mA
P
C
Collector Power Dissipation 400 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100µA, I
E
=0 -30 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -10mA. I
B
=0 -25 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -10µA. I
C
=0 - 5 V
I
CBO
Collector Cut-off Current V
CB
= -25V, I
E
=0 -100 nA
I
EBO
Emitter Cut-off Current V
EB
= -3V, I
C
=0 -100 nA
h
FE
* DC Current Gain V
CE
= -1V, I
C
= -50mA 70 400
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= -300mA, I
B
= -30mA -0.35 -0.6 V
Classification O Y G
h
FE
70 ~ 140 120 ~ 240 200 ~ 400
KSA642
Low Frequency Power Amplifier
• Complement to KSD227
• Collector Power Dissipation : P
C
= 400mW
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1. Emitter 2. Base 3. Collector
TO-92
1