KSA642YTA Datasheet KSA642OTA, KSA642YBU, KSA642CGBU | P1-P3

KSA642

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25°C unless otherwise noted

* PW≤10ms, Duty cycle≤50%

Electrical Characteristics

T

a

=25°C unless otherwise noted

* Pulse Test: PW≤350µs, Duty cycle≤2%

h

FE

Classification

Symbol Parameter Ratings Units

V

CBO

Collector-Base Voltage -30 V

V

CEO

Collector-Emitter Voltage -25 V

V

EBO

Emitter-Base Voltage -5 V

I

C

Collector Current (DC) -300 mA

I

CP

* Collector Current (Pulse) -500 mA

P

C

Collector Power Dissipation 400 mW

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

= -100µA, I

E

=0 -30 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= -10mA. I

B

=0 -25 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= -10µA. I

C

=0 - 5 V

I

CBO

Collector Cut-off Current V

CB

= -25V, I

E

=0 -100 nA

I

EBO

Emitter Cut-off Current V

EB

= -3V, I

C

=0 -100 nA

h

FE

* DC Current Gain V

CE

= -1V, I

C

= -50mA 70 400

V

CE

(sat) * Collector-Emitter Saturation Voltage I

C

= -300mA, I

B

= -30mA -0.35 -0.6 V

Classification O Y G

h

FE

70 ~ 140 120 ~ 240 200 ~ 400

KSA642

Low Frequency Power Amplifier

• Complement to KSD227

• Collector Power Dissipation : P

C

= 400mW

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

1. Emitter 2. Base 3. Collector

TO-92

1

KSA642

Rev. A1, June 2001

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltag

Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

Figure 5. Collector Output Capacitance

-0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10

-20

-40

-60

-80

-100

-120

-140

-160

-180

-200

I

B

=-1.0mA

I

B

=-1.2mA

I

B

=-0.8mA

I

B

=-1.4mA

I

B

=-0.6mA

I

B

=-0.4mA

I

B

=-1.6mA

I

B

=-0.2mA

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

-1 -10 -100 -1000

10

100

1000

V

CE

= -1V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

-1 -10 -100 -1000

-0.01

-0.1

-1

-10

Ic = 10 I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

-1

-10

-100

-1000

V

CE

= -1V

I

C

[mA], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

-1 -10 -100 -300

1

10

20

f = 1MHz

I

E

=0

C

ob

[pF], CAPACITANCE

V

CB

[V], COLLECTOR BASE VOLTAGE

0.46

±0.10

1.27TYP

(R2.29)

3.86MAX

[1.27

±0.20

]

1.27TYP

[1.27

±0.20

]

3.60

±0.20

14.47

±0.40

1.02

±0.10

(0.25)

4.58

±0.20

4.58

+0.25

–0.15

0.38

+0.10

–0.05

0.38

+0.10

–0.05

TO-92

Package Demensions

KSA642

Dimensions in Millimeters

KSA642YTA

KSA642YTA

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