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ZXMS6006SGTA

P1-P3P4-P6P7-P9
ZXMS6006SG
Document number: DS35141 Rev. 2 - 2
1 of 9
www.diodes.com
November 2011
© Diodes Incorporated
ZXMS6006SG
ADVANCE INFORMATION
A Product Line o
f
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET
®
MOSFET
Product Summary
• Continuos drain source voltage 60V
• On-state resistance 100mΩ
• Nominal load current (V
IN
= 5V) 2.8A
• Clamping Energy 480mJ
Description and Applications
The ZXMS6006SG is a self protected low side MOSFET with logic
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6006SG is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
• Lamp Driver
• Motor Driver
• Relay Driver
• Solenoid Driver
Features and Benefits
• Compact high power dissipation package
• Low input current
• Logic Level Input (3.3V and 5V)
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input Protection (ESD)
• High continuous current rating
• Green, RoHS Compliant (Note 1)
• Halogen and Antimony Free. (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.112 grams (approximate)
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMS6006SGTA ZXMS6006S 7 12 1,000
Notes: 1. Contain <900ppm bromine, chlorine (<1500ppm total) and <1000ppm antimony compounds.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
ZXMS6006S = Product type Marking Code
Top View
SOT-223
Top view
Pin Out
Device symbol
D
S
IN
ZXMS
6006S
ZXMS6006SG
Document number: DS35141 Rev. 2 - 2
2 of 9
www.diodes.com
November 2011
© Diodes Incorporated
ZXMS6006SG
ADVANCE INFORMATION
A Product Line o
f
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Functional Block Diagram
ZXMS6006SG
Document number: DS35141 Rev. 2 - 2
3 of 9
www.diodes.com
November 2011
© Diodes Incorporated
ZXMS6006SG
ADVANCE INFORMATION
A Product Line o
f
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Continuous Drain-Source Voltage
V
DS
60 V
Drain-Source Voltage for short circuit protection
V
DS
(
SC
)
16 V
Continuous Input Voltage
V
IN
-0.5 ... +6 V
Continuous Input Current @-0.2V ≤ V
IN
≤ 6V
Continuous Input Current @V
IN
< -0.2V or V
IN
> 6V
I
IN
No limit
│I
IN
│≤2
mA
Pulsed Drain Current @V
IN
= 3.3V I
DM
11 A
Pulsed Drain Current @V
IN
= 5V I
DM
13 A
Continuous Source Current (Body Diode) (Note 4)
I
S
2 A
Pulsed Source Current (Body Diode)
I
SM
12 A
Unclamped Single Pulse Inductive Energy,
T
J
= 25°C, I
D
= 0.5A, V
DD
= 24V
E
AS
480 mJ
Electrostatic Discharge (Human Body Model)
V
ESD
4000 V
Charged Device Model
V
CDM
1000 V
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Power Dissipation at T
A
= 25°C (Note 4)
Linear Derating Factor
P
D
1.0
8.0
W
mW/°C
Power Dissipation at T
A
= 25°C (Note 5)
Linear Derating Factor
P
D
1.6
12.8
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 4)
R
θJA
125
°C/W
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
83
°C/W
Thermal Resistance, Junction to Case (Note 6)
R
θJC
39
°C/W
Operating Temperature Range
T
J
-40 to +150
°C
Storage Temperature Range
T
STG
-55 to +150
°C
Notes: 4. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and
source 20% to isolate connections.
5. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and
source 20% to isolate connections.
6. Thermal resistance between junction and the mounting surfaces of drain and source pins.
P1-P3P4-P6P7-P9

ZXMS6006SGTA

Mfr. #:
Buy ZXMS6006SGTA
Manufacturer:
Diodes Incorporated
Description:
MOSFET 60V N-CH INTELLIFET 100mOhm 2.8A 480mJ
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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