PBSS305PX_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 8 December 2009 3 of 15
NXP Semiconductors
PBSS305PX
80 V, 4.0 A PNP low V
CEsat
(BISS) transistor
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −80 V
V
CEO
collector-emitter voltage open base - −80 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current - −4A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −8A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-0.6W
[2]
-1.65W
[3]
-2.1W
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm
2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
006aaa556
T
amb
(°C)
−75 17512525 75−25
1.0
0.5
1.5
2.0
2.5
P
tot
(W)
0
(3)
(2)
(1)
