MT41K1G8RKB-107:P

Table 9: DDR3L I
CDD
Specifications and Conditions (Rev P)
Note 1 applies to the entire table
Combined
Symbol
Individual
Die Status
Bus
Width -125 -107 -093 Units
I
CDD0
I
CDD0
=
I
DD0
+ I
DD2P0
+ 5
x4, x8 43 45 48 mA
I
CDD1
I
CDD1
=
I
DD1
+ I
DD2P0
+ 5
x4, x8 58 60 64 mA
I
CDD2P0
(slow exit) I
CDD2P0
=
I
DD2P0
+ I
DD2P0
x4, x8 20 22 24 mA
I
CDD2P1
(fast exit) I
CDD2P1
=
I
DD2P1
+ I
DD2P0
x4, x8 21 22 25 mA
I
CDD2Q
I
CDD2Q
=
I
DD2Q
+ I
DD2P0
x4, x8 25 26 29 mA
I
CDD2N
I
CDD2N
=
I
DD2N
+ I
DD2P0
x4, x8 26 28 34 mA
I
CDD2N T
I
CDD2NT
=
I
DD2NT
+ I
DD2P0
x4, x8 30 33 39 mA
I
CDD3P
I
CDD3P
= I
DD3P
+
I
DD2P0
x4, x8 25 26 29 mA
I
CDD3N
I
CDD3N
=
I
DD3N
+ I
DD2P0
x4, x8 30 32 35 mA
I
CDD4R
I
CDD4RCDD4R
=
I
DD4R
+ I
DD2P0
+ 5
x4, x8 105 106 127 mA
I
CDD4W
I
CDD4W
=
I
DD4W
+ I
DD2P0
+ 5
x4, x8 105 106 127 mA
I
CDD5B
I
CDD5B
=
I
DD5B
+ I
DD2P0
x4, x8 160 163 172 mA
I
CDD6
I
CDD6
=
I
DD6
+ I
DD6
x4, x8 30 30 30 mA
I
CDD6ET
I
CDD6ET
=
I
DD6ET
+ I
DD6ET
x4, x8 46 46 46 mA
I
CDD7
I
CDD7
=
I
DD7
+ I
DD2P0
+ 5
x4, x8 145 162 167 mA
I
CDD8
I
CDD8
= 2 × I
DD2P0
+ 4 x4, x8 24 26 30 mA
Note:
1. I
CDD
values reflect the combined current of both individual die. I
DDx
represents individu-
al die values.
8Gb: x4, x8 TwinDie DDR3L SDRAM
Electrical Specifications – I
CDD
Parameters
CCMTD-1725822587-9746
DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Package Dimensions
Figure 5: 78-Ball FBGA Die Rev. E (package code TRF)
Seating plane
0.12 A
123789
Ball A1 ID
(covered by SR)
Ball A1 ID
A
0.3 ±0.05
1.1 ±0.1
6.4 CTR
9.5 ±0.1
0.8 TYP
9.6 CTR
11.5 ±0.1
78X Ø0.45
Dimensions apply
to solder balls
post-reflow
on Ø0.33 NSMD
ball pads.
0.8 TYP
A
B
C
D
E
F
G
H
J
K
L
M
N
Notes:
1. All dimensions are in millimeters.
2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).
8Gb: x4, x8 TwinDie DDR3L SDRAM
Package Dimensions
CCMTD-1725822587-9746
DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Figure 6: 78-Ball FBGA Die Rev. N, P (package code RKB)
Seating plane
0.12 A
Ball A1 ID
(covered by SR)
Ball A1 ID
A
0.3 ±0.05
1.1 ±0.1
6.4 CTR
8 ±0.1
0.8 TYP
9.6 CTR
10.5 ±0.1
0.8 TYP
78X Ø0.45
Dimensions apply
to solder balls post-
reflow on Ø0.33
NSMD ball pads.
123789
A
B
C
D
E
F
G
H
J
K
L
M
N
Notes:
1. All dimensions are in millimeters.
2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000
www.micron.com/products/support Sales inquiries: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc. TwinDie is a trademark of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.
8Gb: x4, x8 TwinDie DDR3L SDRAM
Package Dimensions
CCMTD-1725822587-9746
DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.

MT41K1G8RKB-107:P

Mfr. #:
Manufacturer:
Micron
Description:
DRAM DDR3 8G 1GX8 FBGA DDP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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