FCP600N65S3R0
www.onsemi.com
4
0.1
1
10
20
−55
o
C
150
o
C
*Notes:
1. V
DS
= 20V
2. 250
ms Pulse Test
25
o
C
I
D
, Drain Current[A]
V
GS
, Gate−Source Voltage[V]
0.2 1 10
0.01
0.1
1
10
30
*Notes:
1. 250
m
s Pulse Test
2. T
C
= 25
o
C
I
D
, Drain Current[A]
V
DS
, Drain−Source Voltage[V]
V
GS
= 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
0.0 0.5 1.0 1.5
0.001
0.01
0.1
1
10
100
*Notes:
1. V
GS
= 0V
2. 250
ms Pulse Test
150
o
C
I
S
, Reverse Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
25
o
C
−55
o
C
036912
0.0
0.4
0.8
1.2
*Note: T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
DS(ON)
,
Drain−Source On−Resistance [
W]
I
D
, Drain Current [A]
0.1 1 10 100 1000
0.1
1
10
100
1000
10000
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
V
DS
, Drain−Source Voltage [V]
036912
0
2
4
6
8
10
V
DS
= 400V
V
DS
= 130V
*Note: I
D
= 3A
V
GS
, Gate−Source Voltage [V]
Q
g
, Total Gate Charge [nC]
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
TYPICAL PERFORMANCE CHARACTERISTICS
34 5 6 7 8 9
