SUG80050E
www.vishay.com
Vishay Siliconix
S17-1206-Rev. B, 26-Jul-17
2
Document Number: 75186
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Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 150 - - V
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2 - 4 V
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - 250 nA
Zero gate voltage drain current I
DSS
V
DS
= 150 V, V
GS
= 0 V - - 1
μA
V
DS
= 150 V, V
GS
= 0 V, T
J
= 125 °C - - 150
V
DS
= 150 V, V
GS
= 0 V, T
J
= 175 °C - - 5 mA
On-state drain current
a
I
D(on)
V
DS
≥ 10 V, V
GS
= 10 V 30 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 20 A - 0.0045 0.0054
Ω
V
GS
= 7.5 V, I
D
= 15 A - 0.0050 0.0063
Forward transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A - 60 - S
Dynamic
b
Input capacitance C
iss
V
DS
= 75 V, V
GS
= 0 V, f = 1 MHz
- 6250 -
pFOutput capacitance C
oss
- 1100 -
Reverse transfer capacitance C
rss
-65-
Total gate charge Q
g
V
DS
= 75 V, V
GS
=10 V, I
D
= 20 A
- 110 165
nCGate-source charge Q
gs
-33-
Gate-drain charge Q
gd
-28-
Gate resistance R
g
f = 1 MHz 0.6 3.1 6.2 Ω
Turn-on delay time t
d(on)
V
DD
= 75 V, R
L
= 5 Ω, I
D
≅ 15 A,
V
GEN
= 10 V, R
g
= 1 Ω
-1827
ns
Rise time t
r
-4466
Turn-off delay time t
d(off)
- 72 108
Fall time t
f
-5583
Drain-Source Body Diode Characteristics
Pulse diode forward current (t = 100 μs) I
SM
- - 100 A
Body diode voltage V
SD
I
F
= 15 A, V
GS
= 0 V - 0.85 1.5 V
Body diode reverse recovery time t
rr
I
F
= 15 A, dI/dt = 100 A/μs
- 130 195 ns
Body diode reverse recovery charge Q
rr
- 0.71 1.07 μC
Reverse recovery fall time t
a
-97-
ns
Reverse recovery rise time t
b
-33-
Body diode peak reverse recovery charge I
RM(REC)
-1218A
