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LX5561LL-TR

P1-P3P4-P6P7-P8
LX5561
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright © 2006
Rev. 1.0, 2006-12-20
WWW.Microsemi .COM
InGaAs – E-Mode pHEMT Low Noise Amplifier
TM
®
DESCRIPTION
The LX5561 is a low noise amplifier
(LNA) for WLAN applications in the
2.4-2.5 GHz frequency range. This
LNA is manufactured with an InGaAs
Enhancement mode pseudomorphic
HEMT (E-pHEMT) process.
It operates with a single positive
voltage supply of 3.3V, with noise
figure of 1.5dB while maintaining
input third order intercept point(IIP3)
of up to +6.5dBm.
The LNA is implemented with bias
circuit and input/output matching circuit
on chip, resulting in simple external
circuit on board. In addition, the on-
chip bias circuit provides stable
performance of gain, NF and current for
voltage variation compared to a general
resistor-network bias circuit.
The LX5561 is available in a 12-pin
2mm x 2mm micro-lead package
(MLPQ-12L).
BLOCK DIAGRAM
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
0.5µm InGaAs E-mode pHEMT
2.4 – 2.5GHz Operation
Single 3.3V Supply
Gain ~ 13.0dB
Noise Figure ~ 1.5dB
Input IP3 ~ +6.5dBm
Input P1dB ~ +2.5dBm
On-Chip Bias Circuit
On-Chip Input/Output Match
2mm x 2mm MLPQ-12L
Low Profile 0.5mm
APPLICATIONS
Wireless LAN 802.11b/g
WiMax
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
LL
Plastic MLPQ
12 pin
RoHS Compliant / Pb-free
LX5561LL
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5561LL-TR)
L
L
X
X
5
5
5
5
6
6
1
1
Input
Match
Bias
Circuit
RF
Output
RF
Input
Vdd
Output
Match
Input
Match
Bias
Circuit
RF
Output
RF
Input
Vdd
Output
Match
LX5561
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
Copyright © 2006
Rev. 1.0, 2006-12-20
WWW.Microsemi .COM
InGaAs – E-Mode pHEMT Low Noise Amplifier
TM
®
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltage, RF Off........................................................................................... 4 V
Drain Current ............................................................................................................ 40 mA
Total Power Dissipation............................................................................................0.15 W
RF Input Power..................................................................................................... +10 dBm
Operation Ambient Temperature................................................................. -40°C to +85°C
Storage Temperature Range........................................................................ -65°C to 150°C
Package Peak Temp. for Solder Reflow (40 seconds maximum exposure)....260°C (+0 -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
PACKAGE PIN OUT
N/C
RF IN
N/C
N/C
GND
N/C
N/C
RF OUT
N/C
VDD
N/C
N/C
2
1
3
456
7
8
9
10 11 12
LL PACKAGE
(Bottom View)
RoHS / Pb-free NiPdAu Finish
FUNCTIONAL PIN DESCRIPTION
Name Pin # Description
RF IN 2
RF input for the low noise amplifier. This pin is AC-coupled and does not require a DC-blocking
capacitor.
RF OUT 8
RF output for the low noise amplifier. This pin is AC-coupled and does not require a DC-blocking
capacitor.
VDD 12 Supply voltage.
GND 5 Ground.
N/C
1,3,4,6,7,9,
10,11,
Center
Metal
Not Connected. They can be treated either as open pins or connected to ground.
P
P
A
A
C
C
K
K
A
A
G
G
E
E
D
D
A
A
T
T
A
A
LX5561
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
Copyright © 2006
Rev. 1.0, 2006-12-20
WWW.Microsemi .COM
InGaAs – E-Mode pHEMT Low Noise Amplifier
TM
®
ELECTRICAL CHARACTERISTICS
Test conditions: V
DD
= 3.3V, I
DD
= 10.5mA, T
A
= +25°C (Room Temperature)
LX5561
Parameter Symbol Test Conditions
Min Typ Max
Units
Application Frequency Range f 2.4 2.5 GHz
Small-Signal Gain S21 13.0 dB
Noise Figure NF 1.5 1.8 dB
Input 3
rd
Order Intercept Point IIP3 Freq. 1 = 2.412GHz, Freq. 2 = 2.432GHz 6.5 dBm
Input P1dB IP1dB Freq. = 2.45GHz 2.5 dBm
Input Return Loss S11 12 dB
Output Return Loss S22 12 dB
Supply Voltage V
DD
3.3 V
Supply Current I
DD
10.5 mA
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S
P1-P3P4-P6P7-P8

LX5561LL-TR

Mfr. #:
Buy LX5561LL-TR
Manufacturer:
Microchip / Microsemi
Description:
RF Amplifier LX5561LL-TR
Lifecycle:
New from this manufacturer.
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