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STTH812DI

P1-P3P4-P6P7-P9P10-P11
March 2006 Rev 1 1/11
11
STTH812
Ultrafast recovery - 1200 V diode
Main product characteristics
Features and benefits
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
operation
■ High reverse voltage capability
■ High junction temperature
■ Insulated packages:
– TO-220Ins
Electrical insulation = 2500 V
RMS
Capacitance = 7 pF
– TO-220FPAC
Electrical insulation = 2000 V
RMS
Capacitance = 12 pF
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage current,
and therefore thermal runaway guard band, is an
immediate competitive advantage for this device.
Order codes
I
F(AV)
8 A
V
RRM
1200 V
T
j
175° C
V
F
(typ) 1.25 V
t
rr
(typ) 50 ns
Part Number Marking
STTH812D STTH812D
STTH812G STTH812G
STTH812G-TR STTH812G
STTH812FP STTH812FP
STTH812DI STTH812DI
KA
TO-220FPAC
STTH812FP
D
2
PAK
STTH812G
TO-220AC
STTH812D
K
K
A
A
K
A
NC
A
K
TO-220Ins
STTH812DI
www.st.com
Characteristics STTH812
2/11
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.5 x I
F(AV)
+ 0.05 I
F
2
(RMS)
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 1200 V
I
F(RMS)
RMS forward current
TO-220AC / D
2
PAK / TO-220FPAC 30
A
TO-220AC Ins 20
I
F(AV)
Average forward current, δ = 0.5
TO-220AC / D
2
PA K T
c
= 140° C
8ATO-220FPAC T
c
= 75° C
TO-220AC Ins T
c
= 115° C
I
FRM
Repetitive peak forward current t
p
= 5 µs, F = 5 kHz square 100 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 80 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature 175 °C
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AC / D
2
PA K 1. 9
°C/WTO-220FPAC 5.4
TO-220AC Ins 3.1
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
8
µA
T
j
= 125° C 5 50
V
F
(2)
Forward voltage drop
T
j
= 25° C
I
F
= 8 A
2.2
VT
j
= 125° C 1.30 2.0
T
j
= 150° C 1.25 1.9
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %
STTH812 Characteristics
3/11
Table 4. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25° C
100
ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25° C
50 70
I
RM
Reverse recovery current
I
F
= 8 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125° C
14 21 A
S Softness factor
I
F
= 8 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125° C
2
t
fr
Forward recovery time
I
F
= 8 A dI
F
/dt = 50 A/µs
V
FR
= 1.5 x V
Fmax
, T
j
= 25° C
400 ns
V
FP
Forward recovery voltage
I
F
= 8 A, dI
F
/dt = 50 A/µs,
T
j
= 25° C
7V
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
0
2
4
6
8
10
12
14
16
18
20
012345678910
P(W)
T
δ
=tp/T
tp
δ = 0.05
δ = 1
I (A)
F(AV)
δ = 0.1
δ = 0.2
δ = 0.5
0
10
20
30
40
50
60
70
80
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I (A)
FM
V (V)
FM
T =25°C
(maximum values)
j
T =150°C
(maximum values)
j
T =150°C
(typical values)
j
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Z/R
th(j-c) th(j-c)
t (s)
p
Single pulse
TO-220AC
DPAK
TO-220Ins
2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z/R
th(j-c) th(j-c)
t (s)
p
Single pulse
TO-220FPAC
P1-P3P4-P6P7-P9P10-P11

STTH812DI

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Manufacturer:
STMicroelectronics
Description:
Rectifiers Ultrafast recovery 1200 V diode
Lifecycle:
New from this manufacturer.
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