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BPV22NF

P1-P3P4-P5
BPV22NF, BPV22NFL
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 21-Feb-12
1
Document Number: 81509
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
BPV22NF is a PIN photodiode with high speed and high
radiant sensitivity in a black, plastic package with side view
lens and daylight blocking filter. Filter bandwidth is matched
with 870 nm to 950 nm IR emitters. The lens achieves 80 %
of sensitivity improvement in comparison with flat package.
BPV22NFL has long leads, other specifications like
BPV22NF.
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (in mm): 4.5 x 5 x 6
• Radiant sensitive area (in mm
2
): 7.5
• High radiant sensitivity
• Daylight blocking filter matched with 870 nm to
950 nm emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 60°
• Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSFFxxxx series IR
emitters
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8633
PRODUCT SUMMARY
COMPONENT I
ra
(μA) ϕ (deg) λ
0.5
(nm)
BPV22NF 85 ± 60 790 to 1050
BPV22NFL 85 ± 60 790 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPV22NF Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view
BPV22NFL Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view, long leads
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
60 V
Power dissipation T
amb
≤ 25 °C P
V
215 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t ≤ 5 s T
sd
260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm
2
R
thJA
350 K/W
BPV22NF, BPV22NFL
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 21-Feb-12
2
Document Number: 81509
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
11.3V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
60 V
Reverse dark current V
R
= 10 V, E = 0 I
ro
230nA
Diode capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
D
70 pF
Serial resistance V
R
= 12 V, f = 1 MHz R
S
400 Ω
Open circuit voltage E
e
= 1 mW/cm
2
, λ = 950 nm V
o
370 mV
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Vo
- 2.6 mV/K
Short circuit current E
e
= 1 mW/cm
2
, λ = 950 nm I
k
80 μA
Reverse light current
E
e
= 1 mW/cm
2
, λ = 870 nm,
V
R
= 5 V
I
ra
55 85 μA
Temperature coefficient of I
ra
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
R
= 10 V
TK
Ira
0.1 %/K
Absolute spectral sensitivity
V
R
= 5 V, λ = 870 nm s(λ)0.57A/W
V
R
= 5 V, λ = 950 nm s(λ)0.6A/W
Angle of half sensitivity
ϕ
± 60 deg
Wavelength of peak sensitivity λ
p
940 nm
Range of spectral bandwidth λ
0.5
790 to 1050 nm
Quantum efficiency λ = 950 nm η 90 %
Noise equivalent power V
R
= 10 V, λ = 950 nm NEP 4 x 10
-14
W/√ Hz
Detectivity V
R
= 10 V, λ = 950 nm D* 6 x 10
12
cm√Hz/W
Rise time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
r
100 ns
Fall time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
f
100 ns
Cut-off frequency
V
R
= 12 V, R
L
= 1 kΩ, λ = 870 nm f
c
4MHz
V
R
= 12 V, R
L
= 1 kΩ, λ = 950 nm f
c
1MHz
20 40 60 80
1
10
100
1000
100
94 8403
V
R
= 10 V
T
amb
- Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
94 8409
V
R
=5V
λ = 950 nm
100806040200
I - Relative
Re
verse
Light Current
T - Ambient Temperature (°C)
amb
ra rel
BPV22NF, BPV22NFL
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 21-Feb-12
3
Document Number: 81509
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1
1
10
100
1000
10
94 8411
I-Reverse Light Current (µA)
ra
E
e
- Irradiance (mW/cm
2
)
V
R
=5V
λ =950nm
0.1 1 10
1
10
100
100
94 8412
1mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
I-Reverse Light Current (µA)
ra
0.05 mW/cm
2
0.02 mW/cm
2
λ = 950 nm
V
R
-Reverse Voltage (V)
0
20
40
60
80
948407
E = 0
f = 1 MHz
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
0.1
100
110
94 8426
S(λ)
rel
- Relative Spectral Sensivity
0.0
0.2
0.4
0.6
0.8
1.0
1.2
750 850 950 1050 1150
λ - Wavelength (nm)
0.4 0.2 0
94 8413
0.6
0.9
0.8
0°°°
30°
10 20
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
S
rel
- Relative Sensitivity
P1-P3P4-P5

BPV22NF

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