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NCS2372DWR2G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
July, 2013 − Rev. 1
1 Publication Order Number:
NCS2372/D
NCS2372
1.0 A Output Current,
Dual Power Operational
Amplifiers
The NCS2372 is a monolithic circuit intended for use as a power
operational amplifier in a wide range of applications, including servo
amplifiers and power supplies. No deadband crossover distortion
provides better performance for driving coils.
Features
• Output Current to 1.0 A
• Slew Rate of 1.3 V/ms
• Wide Bandwidth of 1.1 MHz
• Internal Thermal Shutdown
• Single or Split Supply Operation
• Excellent Gain and Phase Margins
• Common Mode Input Includes Ground
• Zero Deadband Crossover Distortion
• These Devices are Pb−Free and are RoHS Compliant
Figure 1. Representative Block Diagram
V
EE
V
CC
Output
Thermal
Protection
Current
Bias
Monitoring
Inv.
Input
Noninv.
Input
1
16
SOIC−16W
DW SUFFIX
CASE 751G
http://onsemi.com
MARKING
DIAGRAM
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = Pb−Free Package
Device Package Shipping
†
ORDERING INFORMATION
NCS2372DWR2G SOIC−16W
(Pb−Free)
1000/Tape & Reel
SOIC−16W
V
CC
Output B
NC
V
EE
/GND
NC
Output A
NC
NC
V
EE
/GND
NC
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
(Top View)
Inputs B
Inputs A
+
-
+
-
PIN CONNECTIONS
16
1
NCS2372DW
AWLYYWWG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NCS2372
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Supply Voltage (from V
CC
to V
EE
) V
S
40 V
Input Differential Voltage Range V
IDR
Note 1 V
Input Voltage Range V
IR
Note 1 V
Junction Temperature (Note 2) T
J
+150 °C
Operating Temperature Range T
A
−40 to +125 °C
Storage Temperature Range T
stg
−55 to +150 °C
DC Output Current I
O
1.0 A
Peak Output Current (Nonrepetitive)
> 1 ms Duration
< 1 ms Duration (Note 3)
I
(max)
1.5
2.0
A
Thermal Resistance, Junction−to−Air
R
q
JA
80 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
12 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Either or both input voltages should not exceed the magnitude of V
CC
or V
EE
.
2. Power dissipation must be considered to ensure maximum junction temperature (T
J
) is not exceeded.
3. When driving inductive loads, negative flyback voltage/current excursions may need to be constrained with Schottky diodes to protect the
output drivers.
NCS2372
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS (V
CC
= +15 V, V
EE
= −15 V, R
L
connected to ground, T
A
= −40° to +125°C.)
Characteristics
Symbol Min Typ Max Unit
Input Offset Voltage (V
CM
= 0)
T
A
= +25°C
T
A
, T
low
to T
high
V
IO
−
−
1.0
−
15
20
mV
Average Temperature Coefficient of Offset Voltage
DV
IO
/DT
− 20 −
mV/°C
Input Bias Current (V
CM
= 0) I
IB
− 100 500 nA
Input Offset Current (V
CM
= 0) I
IO
− 10 50 nA
Large Signal Voltage Gain
V
O
= ±10 V, R
L
= 2.0 k
A
VOL
30 100 − V/mV
Output Voltage Swing (I
L
= 100 mA)
T
A
= +25°C
T
A
= T
low
to T
high
T
A
= +25°C
T
A
= T
low
to T
high
V
OH
V
OL
14.0
13.9
−
−
14.2
−
−14.2
−
−
−
−14.0
−13.9
V
Output Voltage Swing (I
L
= 1.0 A)
V
CC
= +24 V, V
EE
= 0 V, T
A
= +25°C
V
CC
= +24 V, V
EE
= 0 V, T
A
= T
low
to T
high
V
CC
= +24 V, V
EE
= 0 V, T
A
= +25°C
V
CC
= +24 V, V
EE
= 0 V, T
A
= T
low
to T
high
V
OH
V
OL
22.5
22.5
−
−
22.7
−
1.3
−
−
−
1.5
1.6
V
Input Common Mode Voltage Range
T
A
= +25°C
T
A
= T
low
to T
high
V
ICR
V
EE
to (V
CC
−1.0)
V
EE
to (V
CC
−1.3)
V
Common Mode Rejection Ratio (R
S
= 10 k) CMRR 70 90 − dB
Power Supply Rejection Ratio (R
S
= 100 W)
PSRR 70 90 − dB
Power Supply Current
T
A
= +25°C
T
A
= T
low
to T
high
I
D
−
−
8.0
−
10
14
mA
AC ELECTRICAL CHARACTERISTICS (V
CC
= +15 V, V
EE
= −15 V, R
L
connected to ground, T
A
= +25°C, unless otherwise noted.)
Characteristics
Symbol Min Typ Max Unit
Slew Rate (V
in
= −10 V to +10 V, R
L
= 2.0 k, C
L
= 100 pF)
A
V
= −1.0, T
A
= T
low
to T
high
SR 1.0 1.4 −
V/ms
Gain Bandwidth Product (f = 100 kHz, C
L
= 100 pF, R
L
= 2.0 k)
T
A
= 25°C
T
A
= T
low
to T
high
GBW
0.9
0.7
1.4
−
−
−
MHz
Phase Margin T
J
= T
low
to T
high
R
L
= 2.0 k, C
L
= 100 pF
f
m
− 65 − Degrees
Gain Margin
R
L
= 2.0 k, C
L
= 100 pF
A
m
− 15 − dB
Equivalent Input Noise Voltage
R
S
= 100 W, f = 1.0 to 100 kHz
e
n
− 22 −
nV/ Hz√
Total Harmonic Distortion
A
V
= −1.0, R
L
= 50 W, V
O
= 0.5 VRMS, f = 1.0 kHz
THD − 0.02 − %
NOTE: In case V
EE
is disconnected before V
CC
, a diode between V
EE
and Ground is recommended to avoid damaging the device.
P1-P3P4-P6

NCS2372DWR2G

Mfr. #:
Buy NCS2372DWR2G
Manufacturer:
ON Semiconductor
Description:
Operational Amplifiers - Op Amps ANA DUAL POWER OP AMP
Lifecycle:
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