FMMTL718
Document Number: DS33132 Rev. 2 - 2
2 of 5
www.diodes.com
June 2011
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Diodes Incorporated
FMMTL718
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-20 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Base Voltage
V
EBO
-5 V
Continuous Collector Current
I
C
-1 A
Peak Pulse Current
I
CM
-2 A
Base Current
I
B
-200 mA
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
500 mW
Thermal Resistance, Junction to Ambient (Note 4)
R
θJA
250
°C/W
Thermal Resistance, Junction to Lead (Note 5)
R
θJL
197
°C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150
°C
Notes: 4. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-20 -65 V
I
C
= -100 µA
Collector-Emitter Breakdown Voltage (Note 6)
BV
CEO
-20 -55 V
I
C
= -10 mA
Emitter-Base Breakdown Voltage
BV
EBO
-5 -8.8 V
I
E
= -100 µA
Collector Cutoff Current
I
CBO
-10 nA
V
CB
= -15V
Emitter Cutoff Current
I
EBO
-10 nA
V
EB
= -4V
Collector Emitter Cutoff Current
I
CES
-10 nA
V
CE
= -15V
Static Forward Current Transfer Ratio
(Note 6)
h
FE
300
300
200
120
50
500
450
320
200
80
I
C
= -10mA, V
CE
= -2V
I
C
= -100mA, V
CE
= -2V
I
C
= -0.5A, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
I
C
= -1.5A, V
CE
= -2V
Collector-Emitter Saturation Voltage
(Note 6)
V
CE(sat)
-33
-130
-230
-315
-50
-180
-320
-450
mV
mV
mV
mV
I
C
=- 100mA, I
B
= -10mA
I
C
=- 500mA, I
B
= -20mA
I
C
= -1A, I
B
= -50mA
I
C
= -1.5A, I
B
= -100mA
Base-Emitter Turn-On Voltage(Note 6)
V
BE
on
-0.85 -1.0 V
I
C
= -1.25A, V
CE
= -2V
Base-Emitter Saturation Voltage(Note 6)
V
BE
sat
-0.95 -1.1 V
I
C
= -1.25A, I
B
= -100mA
Equivalent On-Resistance
R
CE
sat
210 mΩ I
C
= -1.5A
Output Capacitance
C
obo
9 12 pF
V
CB
= -10V, f = 1MHz
Transition Frequency
f
T
265 MHz
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
Turn-On Time
t
on
108 ns
V
CC
=-10V, I
C
=-1A
I
B1
= I
B2
= -10mA
Turn-Off Time
t
off
121 ns
Note: 6.
Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
