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2N7002CK,215

P1-P3P4-P6P7-P9P10-P12P13-P14
2N7002CK_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 September 2009 6 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
T
j
=25°C
(1) V
GS
=10V
(2) V
GS
=5V
(3) V
GS
= 4.5 V
(4) V
GS
=4V
(5) V
GS
= 3.5 V
T
j
=25°C; V
DS
=5V
(1) minimum values
(2) typical values
(3) maximum values
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical
values
Fig 6. Sub-threshold drain current as a function of
gate-source voltage
T
j
=25°C
(1) V
GS
=4V
(2) V
GS
= 4.5 V
(3) V
GS
=5V
(4) V
GS
=10V
I
D
= 500 mA
(1) T
j
= 150 °C
(2) T
j
=25°C
(3) T
j
= −55 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Drain-source on-resistance as a function of
gate-source voltage; typical values
V
DS
(V)
04312
017aaa005
0.4
0.6
0.2
0.8
1.0
I
D
(A)
0.0
(2)(1)
(3)
(4)
(5)
017aaa006
V
GS
(V)
0321
10
−4
10
−5
10
−3
I
D
(A)
10
−6
(2)(1)
(3)
I
D
(A)
0.0 1.00.80.4 0.60.2
017aaa007
1.5
1.0
2.0
2.5
R
DSon
(Ω)
0.5
(4)
(2)
(1)
(3)
V
GS
(V)
0108462
017aaa008
2
1
3
4
R
DSon
(Ω)
0
(1)
(2)
(3)
2N7002CK_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 September 2009 7 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
I
D
= 0.25 mA; V
DS
=V
GS
(1) maximum values
(2) typical values
(3) minimum values
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 10. Gate-source threshold voltage as a function of
junction temperature
V
GS
= 0 V; f = 1 MHz
(1) C
iss
(2) C
oss
(3) C
rss
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
T
j
(°C)
−60 180120060
017aaa009
1.2
0.6
1.8
2.4
a
0.0
T
j
(°C)
−60 180120060
017aaa010
1
2
3
V
GS(th)
(V)
0
(2)
(1)
(3)
a
R
DSon
R
DSon 25°C()
------------------------------
=
017aaa011
V
DS
(V)
10
−1
10
2
101
10
10
2
C
(pF)
1
(2)
(1)
(3)
2N7002CK_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 September 2009 8 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
I
D
= 200 mA; V
DD
= 30 V; T
j
=25°CV
GS
=0V
(1) T
j
= 150 °C
(2) T
j
=25°C
(3) T
j
= −55 °C
Fig 12. Gate-source voltage as a function of gate
charge; typical values
Fig 13. Source current as a function of source-drain
voltage; typical values
017aaa012
Q
G
(nC)
0.0 1.20.80.4
4
6
2
8
10
V
GS
(V)
0
V
SD
(V)
0.2 1.21.00.6 0.80.4
017aaa013
0.4
0.6
0.2
0.8
1.0
I
S
(A)
0.0
(1) (2) (3)
P1-P3P4-P6P7-P9P10-P12P13-P14

2N7002CK,215

Mfr. #:
Buy 2N7002CK,215
Manufacturer:
Nexperia
Description:
MOSFET Trans MOSFET N-CH 60V 0.3A 3-Pin
Lifecycle:
New from this manufacturer.
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