FDD6030BL/FDU6030BL Rev. C(W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
DSS
Drain-Source Avalanche Energy Single Pulse, V
DD
= 15 V 130 mJ
I
AR
Drain-Source Avalanche Current 10 A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA 30 V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA,Referenced to 25°C
22
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 1 µA
I
GSSF
Gate–Body Leakage, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= –20 V, V
DS
= 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA 1 1.6 3 V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C
–4
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 8.4 A
V
GS
= 10 V, I
D
= 10 A, T
J
=125°C
12
17
19
16
22
26
mΩ
I
D(on)
On–State Drain Current V
GS
= 10 V, V
DS
= 5 V 50 A
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 10 A 29 S
Dynamic Characteristics
C
iss
Input Capacitance 1143 pF
C
oss
Output Capacitance 249 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
107 pF
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 6 12 ns
t
r
Turn–On Rise Time 10 18 ns
t
d(off)
Turn–Off Delay Time 18 29 ns
t
f
Turn–Off Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6 Ω
5 12 ns
Q
g
Total Gate Charge 22 31 nC
Q
gs
Gate–Source Charge 3 nC
Q
gd
Gate–Drain Charge
V
DS
= 15V, I
D
= 10 A,
V
GS
= 10 V
4 nC
