CDDFN10-3304N

Features
n Working voltage 3.3 V
n SMT - DFN package
n Low capacitance - 4 pF
n IEC 61000-4-2 (ESD)
n IEC 61000-4-4 (EFT)
n IEC 61000-4-5 (Surge)
Applications
n FireWire, T1/E1, T3/E3 chip side protection
n Digital Visual Interface (DVI)
n Ethernet 10/100/1000 Base T
n High speed port protection
n Portable electronics
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
CDDFN10-3304N - TVS/Steering Diode Array
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Parameter Symbol CDDFN10-3304N Unit
Peak Pulse Power (t
p
= 8/20 µs)
(NOTE 1)
P
PK
450 W
Peak Pulse Current (t
p
= 8/20 µs)
per IEC 61000-4-5
I
PP
25 A
Storage Temperature T
STG
-55 to +150 ºC
Operating Temperature T
OPR
-55 to +125 ºC
ESD Protection per IEC 61000-4-2
Contact Discharge
Air Discharge
30 max.
30 max.
kV
kV
EFT Protection per IEC 61000-4-4 @ 5/50 ns 40 min. A
Notes:
1. See Peak Pulse Power vs. Pulse Time.
General Information
The CDDFN10-3304N device provides ESD, EFT and Surge protection for high speed
data ports meeting IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5
(Surge) requirements. The Transient Voltage Suppressor array, protecting up to 4 data
lines, offers a Working Peak Voltage of 3.3 V.
The DFN-10 packaged device will mount directly onto the industry standard DFN-10
footprint. Bourns
®
Chip Diodes are easy to handle with standard pick and place
equipment.
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter Symbol Min. Typ. Max. Unit
Breakdown Voltage @ 1 mA V
BR
3.9 V
Working Peak Voltage V
WM
3.3 V
Leakage Current
1
@ V
WM
I
D
1 µA
Clamping Voltage
2
@ I
P
= 5 A 8/20 µs V
C
15 V
Clamping Voltage
2
@ I
P
= 15 A 8/20 µs V
C
18 V
Clamping Voltage
2
@ I
P
= 20 A 8/20 µs V
C
20 V
Junction Capacitance
2
@ 0 V 1 MHz C
D
4.0 5.0 pF
Junction Capacitance
3
@ 0 V 1 MHz
C
IO
1.5 pF
Note 1: Pin 5 to ground.
Note 2: Pin 1,3,7 or 9 to ground.
Note 3: Between Pin 1,3,7 and 9.
Pin
5
Pin
1
Pin
3
GND
Pin
7
Pin
9
*RoHS COMPLIANT
LEAD FREE
*RoHS COMPLIANT
VERSIONS
AVAILABLE
LEAD FREE
VERSIONS ARE
RoHS COMPLIANT*
3312 - 2 mm SMD Trimming Potentiometer
20
40
60
80
100
120
0
03
0252015105
IPP – Peak Pulse Current (% of IPP)
t – Time (µs)
Test Waveform Parameters
t
t = 8 µs
td = 20 µs
t
t
e
t
td = t
|
IPP/2
100
20
40
60
80
0
250
% of Rated Power
T
L
- Lead Temperature (°C)
50 75 100 125 150
Peak Pulse Power
8/20 µs
Average Power
100
1000
10,000
10
10.01 10,000
PPP – Peak Pulse (W)
td – Pulse Duration (µs)
10 100 1,000
450 W, 8/20 µs Waveform
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Input Capacitance (pF)
Input Voltage (V)
4.0
4.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VDD = Floating, GND = 0 V,
f = 1 MHz, T = 25 °C
24
22
20
18
16
14
12
10
8
6
4
2
0
0510 15 20 25
Peak Pulse Current (A)
Clamping Voltage (V)
Any I/O Pin to Another I/O Pin
Waveform
Parameters:
tr = 8 µs
td = 20 µs
22
20
18
16
14
12
10
8
6
4
2
0
0510 15 20 25
Peak Pulse Current (A)
Clamping Voltage (V)
Any I/O Pin to GND
Any I/O Pin to GND
Waveform
Parameters:
tr = 8 µs
td = 20 µs
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CDDFN10-3304N - TVS/Steering Diode Array
Rating & Characteristic Curves
Peak Pulse Power vs. Pulse Time Pulse Waveform
Clamping Voltage vs Peak Pulse Current Clamping Voltage vs Peak Pulse Current
Typical Voltage vs. Capacitance
Power Derating Curve
3312 - 2 mm SMD Trimming Potentiometer
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CDDFN10-3304N - TVS/Steering Diode Array
Product Dimensions
Pin Out
This is a molded DFN10 package with lead free Nickel-Paladium-
Gold (Ni/Pd/Au) on the lead frame. It has a ammability rating of
UL 94V-0.
Recommended Footprint
Typical Part Marking
How to Order
CD DFN10 - 33 04 N
Common Diode
Chip Diode
Package
DFN10 = DFN-10 Package
Working Peak Voltage
33 = 3.3 V
RWM
(Volts)
Number of Lines
04 = 4 Data Lines
Sufx
N = Low Capacitance
Pin Function
1 I/O
2 N.C.
3 I/O
4 N.C.
5 V
CC
6 N.C.
7 I/O
8 N.C.
9 I/O
10 N.C.
CENTER
TAB
GROUND
2.45 - 2.55
(0.096 - 0.100)
PIN 1
INDICATOR
PIN 1
2.45 - 2.55
(0.096 - 0.100)
2.10 - 2.20
(0.083 - 0.087)
1.85 - 1.95
(0.073 - 0.077)
0.50
(0.020)
0.2
(.008)
R
0.50 - 0.60
(0.020 - 0.024)
0.152
(0.006)
2.05
(.081)
1.26
(.050)
3.15
(.124)
1.85
(.073)
2.50
(.100)
0.50
(.020)
0.65
(.026)
0.30
(.012)
1.15 - 1.25
(0.045 - 0.049)
0.35 - 0.45
(0.014 - 0.018)
0.20 - 0.30
(0.008 - 0.012)
2.45 - 2.55
(0.096 - 0.100)
PIN 1
INDICATOR
PIN 1
2.45 - 2.55
(0.096 - 0.100)
2.10 - 2.20
(0.083 - 0.087)
1.85 - 1.95
(0.073 - 0.077)
0.50
(0.020)
0.2
(.008)
R
0.50 - 0.60
(0.020 - 0.024)
0.152
(0.006)
2.05
(.081)
1.26
(.050)
3.15
(.124)
1.85
(.073)
2.50
(.100)
0.50
(.020)
0.65
(.026)
0.30
(.012)
1.15 - 1.25
(0.045 - 0.049)
0.35 - 0.45
(0.014 - 0.018)
0.20 - 0.30
(0.008 - 0.012)
1CH1
2NC
3 GND
(CENTER TAB)
TOP VIEW
CH3
4NC
5VDD
6N
C
7 CH4
8N
C
CH29
NC10
DIMENSIONS:
MM
(INCHES)
Week
Code
Duration
2 Week 1~Week 7
3 Week 8~Week 14
4 Week 15~Week 21
5 Week 22~Week 28
6 Week 29~Week 35
7 Week 36~Week 42
8 Week 43~Week 49
9 Week 50~Week 52
334
YWLLL
DEVICE CODE:
334 = CDDFN10-3304N
LOT
TRACEABILITY
CODE
DATE CODE
YEAR CODE:
5 = 2015
6 = 2016
WEEK CODE:
4 = WEEK 15 to WEEK 21
5 = WEEK 22 to WEEK 28

CDDFN10-3304N

Mfr. #:
Manufacturer:
Bourns
Description:
TVS Diodes / ESD Suppressors TVS Diode Array 3.3VOLT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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