Features
n Working voltage 3.3 V
n SMT - DFN package
n Low capacitance - 4 pF
n IEC 61000-4-2 (ESD)
n IEC 61000-4-4 (EFT)
n IEC 61000-4-5 (Surge)
Applications
n FireWire, T1/E1, T3/E3 chip side protection
n Digital Visual Interface (DVI)
n Ethernet 10/100/1000 Base T
n High speed port protection
n Portable electronics
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
CDDFN10-3304N - TVS/Steering Diode Array
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Parameter Symbol CDDFN10-3304N Unit
Peak Pulse Power (t
p
= 8/20 µs)
(NOTE 1)
P
PK
450 W
Peak Pulse Current (t
p
= 8/20 µs)
per IEC 61000-4-5
I
PP
25 A
Storage Temperature T
STG
-55 to +150 ºC
Operating Temperature T
OPR
-55 to +125 ºC
ESD Protection per IEC 61000-4-2
Contact Discharge
Air Discharge
30 max.
30 max.
kV
kV
EFT Protection per IEC 61000-4-4 @ 5/50 ns 40 min. A
Notes:
1. See Peak Pulse Power vs. Pulse Time.
General Information
The CDDFN10-3304N device provides ESD, EFT and Surge protection for high speed
data ports meeting IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5
(Surge) requirements. The Transient Voltage Suppressor array, protecting up to 4 data
lines, offers a Working Peak Voltage of 3.3 V.
The DFN-10 packaged device will mount directly onto the industry standard DFN-10
footprint. Bourns
®
Chip Diodes are easy to handle with standard pick and place
equipment.
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter Symbol Min. Typ. Max. Unit
Breakdown Voltage @ 1 mA V
BR
3.9 V
Working Peak Voltage V
WM
3.3 V
Leakage Current
1
@ V
WM
I
D
1 µA
Clamping Voltage
2
@ I
P
= 5 A 8/20 µs V
C
15 V
Clamping Voltage
2
@ I
P
= 15 A 8/20 µs V
C
18 V
Clamping Voltage
2
@ I
P
= 20 A 8/20 µs V
C
20 V
Junction Capacitance
2
@ 0 V 1 MHz C
D
4.0 5.0 pF
Junction Capacitance
3
@ 0 V 1 MHz
C
IO
1.5 pF
Note 1: Pin 5 to ground.
Note 2: Pin 1,3,7 or 9 to ground.
Note 3: Between Pin 1,3,7 and 9.
Pin
5
Pin
1
Pin
3
GND
Pin
7
Pin
9
*RoHS COMPLIANT
LEAD FREE
*RoHS COMPLIANT
VERSIONS
AVAILABLE
LEAD FREE
VERSIONS ARE
RoHS COMPLIANT*