2SD2206(TE6,F,M) Datasheet 2SD2206(TE6,F,M) | P1-P3

2SD2206

2009-12-21

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)

2SD2206

Micro Motor Drive, Hammer Drive Applications

Switching Applications

Power Amplifier Applications

• High DC current gain: h

FE

= 2000 (min) (V

CE

= 2 V, I

C

= 1 A)

• Low saturation voltage: V

CE (sat)

= 1.5 V (max) (I

C

= 1 A, I

B

= 1 mA)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage V

CBO

100 V

Collector-emitter voltage V

CEO

100 V

Emitter-base voltage V

EBO

8 V

DC I

C

2

Collector current

Pulse I

CP

3

A

Base current I

B

0.5 A

Collector power dissipation P

C

900 mW

Junction temperature T

j

150 °C

Storage temperature range T

stg

−55 to 150 °C

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

Unit: mm

JEDEC TO-92MOD

JEITA ―

TOSHIBA 2-5J1A

Weight: 0.36 g (typ.)

BASE

EMITTER

≈ 4 kΩ ≈ 800 Ω

COLLECTOR

2SD2206

2009-12-21

2

Electrical Characteristics

(Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current I

CBO

V

CB

= 80 V, I

E

= 0 ― ― 10 μA

Emitter cut-off current I

EBO

V

EB

= 8 V, I

C

= 0 ― ― 4 mA

Collector- emitter breakdown voltage V

(BR) CEO

I

C

= 10 mA, I

B

= 0 100 ― ― V

DC current gain h

FE

V

CE

= 2 V, I

C

= 1 A (pulse) 2000 ― ―

Collector-emitter saturation voltage V

CE (sat)

I

C

= 1 A, I

B

= 1 mA (pulse) ― ― 1.5 V

Base-emitter saturation voltage V

BE (sat)

I

C

= 1 A, I

B

= 1 mA (pulse) ― ― 2.0 V

Transition frequency f

T

V

CE

= 2 V, I

C

= 0.5 A ― 100 ― MHz

Collector output capacitance C

ob

V

CB

= 10 V, I

E

= 0, f = 1 MHz ― 20 ― pF

Turn-on time t

on

― 0.4 ―

Storage time t

stg

― 4.0 ―

Switching time

Fall time t

f

I

B1

= 1 mA,I

B2

= 1 mA,

duty cycle ≤ 1%

― 0.6 ―

μs

Marking

Note2: A line under a Lot No. identifies the indication of product Labels.

Not underlined: `Pb`/INCLUDES > MCV

Underlined: `G`/RoHS COMPATIBLE or `G`/RoHS `Pb`

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

I

B1

20 μs

I

B2

V

CC

= 30 V

Output

30 Ω

I

B2

I

B1

Input

D2206

Lot No.

Note2

Part No. (or abbreviation code)

2SD2206

2009-12-21

3

Collector-emitter voltage V

CE

(V)

I

C

– V

CE

Collector current I

C

(A)

h

FE

– I

C

DC current gain h

FE

Collector current I

C

(A)

V

CE (sat)

– I

C

Collector-emitter saturation voltage

V

CE

(sat)

(V)

Collector current I

C

(A)

Base-emitter saturation voltage

V

BE (sat)

(V)

Collector current I

C

(A)

Collector-emitter voltage V

CE

(V)

Safe Operating Area

Collector current I

C

(A)

V

BE (sat)

– I

C

Base-emitter voltage V

BE

(V)

I

C

– V

BE

Collector current I

C

(A)

10 k

10 m

10

1 k

3 k

30 m 100 m 300 m 1 10

Ta = 100°C

25

−55

Common emitter

V

CE

= 2 V

3

30

100

300

0.3

3

Ta = −55°C

100

25

Common emitter

I

C

/I

B

= 1000

1

1 0.5 3 5

0.5

0

2.4 3.2

Common emitter

V

CE

= 2 V

1

2

3

Ta = 100°C

25

−55

0.8 4.0 1.6

0.5

3

500 m

Common emitter

I

C

/I

B

= 1000

Ta = −55°C

25

100

1 5

5

3 300 m

100 m

1

10

0

1

3

1 2 3 5

Common emitter

Ta = 25°C

I

B

= 200 μA

300 μA

4

2

4

400 μA

500 μA

700 μA 1 mA2 mA 3 mA

10 30 50

0.05

0.3

5

0.03

0.1

0.3

0.5

1

*: Single nonrepetitive pulse

Ta = 25° C

Curves must be derated linearly

with increase in temperature.

I

C

max (pulsed)*

V

CEO

max

1 ms*

10 ms*

100 μs*

100 3

3

300 5 1 0.5

2SD2206(TE6,F,M)

2SD2206(TE6,F,M)

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