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HSMS-286Y-BLKG

P1-P3P4-P4
HSMS-286Y
Microwave Schottky Detector Diodes
In Surface Mount SOD-523 Package
Data Sheet
Features
• Space saving SOD-523 package
• High Detection Sensitivity
Up to 50 mW/uW at 915 MHz
Up to 35 mW/uW at 2.45 GHz
Up to 25 mW/uW at 5.80 GHz
• Tape and Reel Options Available
• MSL 1 & Lead Free
Package Marking and Pin Connections
Description/Applications
The HSMS-286Y of Avago Technologies is a DC biased
detector Diode that designed and optimized for use
from 915MHz to 5.8GHz. They are ideal for RF/ID and
RF Tag applications as well as large signal detection,
modulation, RF to DC conversion or voltage doubling.
The device is housed in a miniature low cost surface
mount SOD-523 package. This miniature package is
particularly useful in the application where board space
is the major concern.
Table 1. Absolute Maximum Ratings
[1]
at Tc = +25
°°
°°
°C
P?
Anode
cathode
Note: Package marking provides orientation and identification
“P” = Device Code
“?” = Month code indicates the month of manufacture
Symbol Parameter Unit Max Rating
P
IV
Peak Inverse Voltage
V4
T
J
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
T
OP
Storage Temperature °C -65 to 150
θjb
Thermal Resistance
[2]
°C/W 175
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. Thermal Resistance is measured from junction to board using IR
method.
Attention: Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model <30V
ESD Human Body Model =50 V
Refer to Avago Technologies Application Note A004R: Electrostatic Discharge, Damage and Control.
2
Typical Performance Curves at Tc = +25
°°
°°
°C
Table 2. Electrical Specifications at Tc = +25
°°
°°
°C
Forward Voltage V
F
(mV) Typical Capacitance C
T
(pF)
250 Min 350 Max 0.30
Test Conditions I
F
= 1.0 mA I
F
= 1.0 mA V
R
= 0V , f = 1MHz
Typical Tangential Sensitivity
TSS (dBm) @ f =
Typical Voltage Sensitivity
(mV/µW) @ f =
Typical Video
Resistance RV (KΩ)
915 MHz 2.45 GHz 5.8 GHz 915 MHz 2.45 GHz 5.8 GHz
-57 -56 -55 50 35 25 5.0
Test
Conditions
Video Bandwidth = 2 MHz
I
b
= 5 µA
Power in = - 40 dBm
RL = 100 KΩ, Ib = 5 µA
Ib = 5 µA
Table 3. RF Electrical Specifications, Tc = +25
°°
°°
°C
VOLTAGE OUT (mV)
-50
0.1
POWER IN (dBm)
-30 -20
10000
10
1
-40 0
100
-10
1000
R
L
= 100 K
Ω
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
915 MHz
2.45 GHz
VOLTAGE OUT (mV)
-50
0.3
POWER IN (dBm)
-30
10
1
-40
30
R
L
= 100 K
Ω
2.45 GHz
915 MHz
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
VOLTAGE OUT (mV)
POWER IN (dBm)
1
10
100
1000
10,000
-40 -30 -10 0-20 10
Frequency = 2.45 GHz
Fixed-tuned FR4 circuit
R
L
= 100 KΩ
20 µA
5 µA
10µA
5
35
30
40
10
15
20
25
.1 1 10 100
OUTPUT VOLTAGE (mV)
BIAS CURRENT (µA )
Input Power =
-30 dBm @ 2.45 GHz
Data taken in fixed-tuned
FR4 circuit
R
L
= 100 KΩ
Figure 1. Forward Current vs. Forward
Voltage at Temperature
Figure 2. +25
°°
°°
°C Output Voltage vs. Input
Power, 3uA Bias
Figure 3. +25
°°
°°
°C Expanded Output Voltage
vs. Input Power.
Figure 4. Dynamic Transfer Characteristic
as a function of DC Bias
Figure 5. Voltage Sensitivity as a Function
of DC Bias Current
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
FORWARD VOLTAGE (V)
FORWARD CURRENT (mA)
+85
o
C
-55
o
C
25
o
C
3
Package Outline and Dimension
CATHODE MARK
A
B
C
E
F
D
2
A
B
DIM
C
D
E
F
0.13 ± 0.05
0.60 ± 0.10
0.30 ± 0.05
0.80 ± 0.10
1.20 ± 0.10
1.60 ± 0.10
MILLIMETERS
PCB Footprint
1.4
0.4
0.4
Unit : mm
1.4
0.4
0.4
Unit : mm
Equivalent Linear Circuit Model,
Diode chip
SPICE Parameters
Parameter Units Value
B
V
V 7.0
C
J0
pF 0.18
E
G
eV 0.69
I
BV
A1E-5
I
S
A 5E -8
N 1.08
R
S
Ω 6.0
P
B
(VJ) V 0.65
P
T
(XTI) 2
M 0.5
C
j
R
j
R
S
R
j
=
8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T
= temperature, K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-286x product,
please refer to Application Note AN1124.
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
P1-P3P4-P4

HSMS-286Y-BLKG

Mfr. #:
Buy HSMS-286Y-BLKG
Manufacturer:
Broadcom / Avago
Description:
RF Detector 4 VBR 0.3 pF
Lifecycle:
New from this manufacturer.
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