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TK32A12N1,S4X

P1-P3P4-P6P7-P9
TK32A12N1
4
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Reverse drain current (DC)
Reverse drain current (pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(Note 5)
(Note 5)
(Note 6)
(Note 6)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
I
DR
= 32 A, V
GS
= 0 V
I
DR
= 32 A, V
GS
= 0 V
-dI
DR
/dt = 100 A/µs
Min
Typ.
73
160
Max
32
110
-1.2
Unit
A
V
ns
nC
Note 5: Ensure that the channel temperature does not exceed 150.
Note 6: Ensure that V
DS
peak does not exceed V
DSS
.
7.
7.
7.
7. Marking (Note)
Marking (Note)
Marking (Note)
Marking (Note)
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 Marking
Marking
Marking
Marking
Note: A line under a Lot No. identifies the indication of product Labels.
Not underlined: `Pb`/INCLUDES > MCV
Underlined: `G`/RoHS COMPATIBLE or `G`/RoHS `Pb`
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
2014-02-07
Rev.2.0
TK32A12N1
5
8.
8.
8.
8. Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Fig.
Fig.
Fig.
Fig. 8.1
8.1
8.1
8.1 I
I
I
I
D
D
D
D
- V
- V
- V
- V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.2
8.2
8.2
8.2 I
I
I
I
D
D
D
D
- V
- V
- V
- V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.3
8.3
8.3
8.3 I
I
I
I
D
D
D
D
- V
- V
- V
- V
GS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 8.4
8.4
8.4
8.4 V
V
V
V
DS
DS
DS
DS
- V
- V
- V
- V
GS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 8.5
8.5
8.5
8.5 R
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
- I
- I
- I
- I
D
D
D
D
Fig.
Fig.
Fig.
Fig. 8.6
8.6
8.6
8.6 R
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
- T
- T
- T
- T
a
a
a
a
2014-02-07
Rev.2.0
TK32A12N1
6
Fig.
Fig.
Fig.
Fig. 8.7
8.7
8.7
8.7 I
I
I
I
DR
DR
DR
DR
- V
- V
- V
- V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.8
8.8
8.8
8.8 Capacitance - V
Capacitance - V
Capacitance - V
Capacitance - V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.9
8.9
8.9
8.9 V
V
V
V
th
th
th
th
- T
- T
- T
- T
a
a
a
a
Fig.
Fig.
Fig.
Fig. 8.10
8.10
8.10
8.10 Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Fig.
Fig.
Fig.
Fig. 8.11
8.11
8.11
8.11 P
P
P
P
D
D
D
D
- T
- T
- T
- T
c
c
c
c
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
2014-02-07
Rev.2.0
P1-P3P4-P6P7-P9

TK32A12N1,S4X

Mfr. #:
Buy TK32A12N1,S4X
Manufacturer:
Toshiba
Description:
MOSFET MOSFET NCh11ohm VGS10V10uAVDS120V
Lifecycle:
New from this manufacturer.
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