Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
PSMN1R2-25YL,115
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
PSMN1R2-25YL_1
© NXP B.V
. 200
9. All rights reserved.
Product data sheet
Rev
. 01 —
25 June 2009
6 of 13
NXP Semiconductors
PSMN1R2-25YL
N-channel 25
V 1.2 m
Ω
logic level MOSFET in LFP
AK
[1]
T
ested to JEDEC standards where applicable.
t
d(on)
turn-on delay time
V
DS
=1
2V
;
R
L
=0
.
5
Ω
; V
GS
=4
.
5V
;
R
G(ext)
=5
.
6
Ω
-6
9
-n
s
t
r
rise time
-
125
-
ns
t
d(off
)
turn-off delay time
-
94
-
ns
t
f
fall time
-
56
-
n
s
Source-drain di
ode
V
SD
source-drain voltage
I
S
=2
5A
;
V
GS
=0V
;
T
j
=2
5°
C
;
see
Figure 15
-
0.78
1.2
V
t
rr
reverse recovery time
I
S
=2
0A
;
d
I
S
/dt = -100 A/
µs; V
GS
=0V
;
V
DS
=2
0V
-5
2
-n
s
Q
r
recovered charge
-
66
-
nC
T
able 6.
Characteristics
…continued
Symbol
Parameter
Conditions
Min
Ty
p
Max
Unit
Fig 5.
Tran
sfer characteristics: drain current as a
function of gate-source voltag
e; typical values
Fig 6.
Drain-sou
rce on-state
resistance as a
function
of gate-source voltag
e; typical values
003aad128
0
20
40
60
80
100
01
234
V
GS
(V)
I
D
(A)
T
j
= 150
°
C
25
°
C
003aad140
0
2
4
6
8
10
12
0
5
10
15
20
V
GS
(V)
R
DS
(
on)
(m
Ω
)
PSMN1R2-25YL_1
© NXP B.V
. 200
9. All rights reserved.
Product data sheet
Rev
. 01 —
25 June 2009
7 of 13
NXP Semiconductors
PSMN1R2-25YL
N-channel 25
V 1.2 m
Ω
logic level MOSFET in LFP
AK
Fig 7.
Outp
ut characteristics: dra
in current as a
function of
drain-source voltage;
typical values
Fig 8.
Sub-threshold
drain current as a
function of
gate-source v
oltage
Fig 9.
Gate-sour
ce threshold voltage as a function
of
junction temperature
Fig 10.
Drain-sour
c
e on-state r
esistance as a func
tion
of drain c
urrent; typical va
lues
003aad131
0
30
60
90
120
01
234
V
DS
(V)
I
D
(A)
V
GS
(V) =
3
3.
5
10
2.
6
2.
4
2.
8
2.
2
003aab271
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
01
23
V
GS
(V)
I
D
(A)
max
ty
p
min
003a
a
c337
0
1
2
3
-
60
0
60
120
180
T
j
(
°
C)
V
GS
(t
h)
(V)
max
typ
mi
n
003aad132
0
2
4
6
8
10
0
2
04
0
6
08
0
1
0
0
I
D
(A)
R
DS(on)
(m
Ω
)
3
2.8
2.6
3.
5
V
GS
(V) =
1
0
PSMN1R2-25YL_1
© NXP B.V
. 200
9. All rights reserved.
Product data sheet
Rev
. 01 —
25 June 2009
8 of 13
NXP Semiconductors
PSMN1R2-25YL
N-channel 25
V 1.2 m
Ω
logic level MOSFET in LFP
AK
Fig 11.
Normalized d
rain-source on-state resistance
factor as a f
unction of junction te
mperature
Fig 12.
Gate charge wavefo
rm definitions
Fig 13.
Gate-source voltage as a fun
ction of gate
charge; typical values
Fig
14.
Input, output and reverse transfe
r capacitances
as a function of
drain-source voltage
; typical
values
03aa27
0
0.
5
1
1.
5
2
−
60
0
60
120
180
T
j
(
°
C)
a
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
003aad134
0
2
4
6
8
10
0
40
80
120
Q
G
(n
C)
V
GS
(V)
V
DS
= 12V
003aad135
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
rs
s
C
os
s
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
PSMN1R2-25YL,115
Mfr. #:
Buy PSMN1R2-25YL,115
Manufacturer:
Nexperia
Description:
MOSFET N-CH 25V 1.2 mOhm Logic Level MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
PSMN1R2-25YL,115
