IXFK100N10 Datasheet IXFK100N10 | P1-P3

1 - 4

Symbol Test Conditions Maximum Ratings

IXFK IXFN

V

DSS

T

J

= 25°C to 150°C 100 100 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MW 100 100 V

V

GS

Continuous ±20 ±20 V

V

GSM

Transient ±30 ±30 V

I

D25

T

C

= 25°C 100  150 A

I

D120

T

C

= 120°C, limited by external leads 76 - A

I

DM

T

C

= 25°C, pulse width limited by T

JM

560 560 A

I

AR

T

C

= 25°C7575A

E

AR

T

C

= 25°C3030mJ

dv/dt I

S

£ I

DM

, di/dt £ 100 A/ms, V

DD

£ V

DSS

, 5 5 V/ns

T

J

£ 150°C, R

G

= 2 W

P

D

T

C

= 25°C 500 520 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.063 in) from case for 10 s 300 - °C

V

ISOL

50/60 Hz, RMS t = 1 min - 2500 V~

I

ISOL

£ 1 mA t = 1 s - 3000 V~

M

d

Mounting torque 0.9/6 1.5/13 Nm/lb.in.

Terminal connection torque - 1.5/13 Nm/lb.in.

Weight 10 30 g

HiPerFET

TM

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

Features

●

International standard packages

●

JEDEC TO-264 AA, epoxy meet

UL 94 V-0, flammability classification

●

miniBLOC with Aluminium nitride

isolation

●

Low R

DS (on)

HDMOS

TM

process

●

Rugged polysilicon gate cell structure

●

Unclamped Inductive Switching (UIS)

rated

●

Low package inductance

●

Fast intrinsic Rectifier

Applications

●

DC-DC converters

●

Synchronous rectification

●

Battery chargers

●

Switched-mode and resonant-mode

power supplies

●

DC choppers

●

Temperature and lighting controls

●

Low voltage relays

Advantages

●

Easy to mount

●

Space savings

●

High power density

TO-264 AA (IXFK)

S

G

D

S

G

S

G = Gate D = Drain

S = Source TAB = Drain

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

S

G

S

D

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

V

DSS

V

GS

= 0 V, I

D

= 1 mA 100 V

V

GH(th)

V

DS

= V

GS

, I

D

= 8 mA 2 4 V

I

GSS

V

GS

= ±20 V

DC

, V

DS

= 0 ±200 nA

I

DSS

V

DS

= 0.8 • V

DSS

T

J

= 25°C 400 mA

V

GS

= 0 V T

J

= 125°C2mA

R

DS(on)

V

GS

= 10 V, I

D

= 75 A 12 mW

Pulse test, t £ 300 ms, duty cycle d £ 2 %

92803G(8/96)

miniBLOC, SOT-227 B (IXFN)

E153432

(TAB)

V

DSS

I

D25

R

DS(on)

IXFK100N10 100 V 100 A 12 mW

IXFN150N10 100 V 150 A 12 mW

t

rr

£ 200 ns

IXYS reserves the right to change limits, test conditions, and dimensions.

2 - 4

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

V

DS

= 10 V; I

D

= 50 A, pulse test 80 S

C

iss

9000 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 3200 pF

C

rss

1800 pF

t

d(on)

30 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 75 A 60 ns

t

d(off)

R

G

= 1 W (External), 100 ns

t

f

60 ns

Q

g(on)

360 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 75 A 75 nC

Q

gd

180 nC

R

thJC

TO-264 AA 0.25 K/W

R

thCK

TO-264 AA 0.15 K/W

R

thJC

miniBLOC, SOT-227 B 0.24 K/W

R

thCK

miniBLOC, SOT-227 B 0.05 K/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

V

GS

= 0 V IXFK 100 100 A

IXFN 150 150 A

I

SM

Repetitive; IXFK 100 400 A

pulse width limited by T

JM

IXFN 150 600 A

V

SD

I

F

= 100 A, V

GS

= 0 V, 1.75 V

Pulse test, t £ 300 ms, duty cycle d £ 2 %

t

rr

150 200 ns

Q

RM

0.6 mC

I

RM

8A

I

F

= 25 A

-di/dt = 100 A/ms,

V

R

= 50 V

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

TO-264 AA Outline

M4 screws (4x) supplied

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.50 31.88 1.240 1.255

B 7.80 8.20 0.307 0.323

C 4.09 4.29 0.161 0.169

D 4.09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169

F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193

H 38.00 38.23 1.496 1.505

J 11.68 12.22 0.460 0.481

K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033

M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001

O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235

Q 26.54 26.90 1.045 1.059

R 3.94 4.42 0.155 0.174

S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987

U -0.05 0.1 -0.002 0.004

miniBLOC, SOT-227 B

IXFK 100N10

IXFN 150N10

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

3 - 4

IXFK 100N10

IXFN 150N10

Fig. 1 Output Characteristics Fig. 2 Input Admittance

Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of

Case Temperature Breakdown and Threshold Voltage

Fig. 3 R

DS(on)

vs. Drain Current Fig. 4 Temperature Dependence

of Drain to Source Resistance

T

J

- Degrees C

-50 -25 0 25 50 75 100 125 150

BV/V

G(th)

- Normalized

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

T

C

- Degrees C

-50 -25 0 25 50 75 100 125 150

I

D

- Amperes

0

25

50

75

100

125

150

175

T

J

- Degrees C

-50 -25 0 25 50 75 100 125 150

R

DS(on)

- Normalized

0.50

0.75

1.00

1.25

1.50

1.75

2.00

I

D

- Amperes

0 40 80 120 160 200 240 280 320

R

DS(on)

- Normalized

0.8

0.9

1.0

1.1

1.2

1.3

1.4

V

GS

- Volts

012345678910

I

D

- Amperes

0

50

100

150

200

250

300

T

J

= 125 C

V

DS

- Volts

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

I

D

- Amperes

0

50

100

150

200

250

300

350

400

5V

V

GS

= 10V

V

GS

= 15V

I

D

= 75A

BV

DSS

V

GS(th)

6V

8V

9V

V

GS

= 10V

7V

T

J

= 25°C

T

J

= 125 C

T

J

= 25°C

150N10

100N10

IXFK100N10

IXFK100N10

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