VS-GB50NA120UX
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Vishay Semiconductors
Revision: 11-Jun-15
4
Document Number: 93101
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Fig. 5 - Typical IGBT Threshold Voltage
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
GE
= 15 V
Fig. 7 - Maximum DC Forward Current vs.
Case Temperature
Fig. 8 - Typical Diode Forward Characteristics
Fig. 9 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V,
R
g
= 5 , V
GE
= 15 V
Fig. 10 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V,
R
g
= 5 , V
GE
= 15 V
V
geth
(V)
I
C
(mA)
0.0002 0.0004 0.0006 0.0008 0.001
3.0
5.5
4.0
4.5
5.0
3.5
T
J
= 25 °C
T
J
= 125 °C
V
CE
(V)
T
J
(°C)
10 50 9030 70 130110 150
2
6
4
5
3
100 A
50 A
25 A
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
010 30 5020 40 60 70 80
0
160
100
120
140
20
40
60
80
I
F
(A)
V
FM
(V)
01 32 456
0
200
25
75
100
150
125
175
50
T
J
= 125 °C
T
J
= 25 °C
Energy (mJ)
I
C
(A)
10 20 30 40 50
0
4
2
3
1
E
off
E
on
Switching Time (ns)
I
C
(A)
010 5030 4020 60
10
1000
100
t
d(off)
t
d(on)
t
f
t
r
