HN1B01FU
2014-03-01 2
Q1, Q2 Common Absolute Maximum Ratings
(Ta
=
25
°
C)
Characteristic Symbol Rating Unit
Collector power dissipation P
C
* 200 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Q1
Electrical Characteristics
(Ta = 25
°
C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
― V
CB
= −50V, I
E
= 0 ― ― −0.1 μA
Emitter cut-off current I
EBO
― V
EB
= −5V, I
C
= 0 ― ― −0.1
μA
DC current gain h
FE (Note)
― V
CE
= −6V, I
C
= −2mA 120 ― 400
Collector-emitter
saturation voltage
V
CE (sat)
― I
C
= −100mA, I
B
= −10mA ― −0.1 −0.3
V
Transition frequency f
T
― V
CE
= −10V, I
C
= −1mA ― 120 ― MHz
Collector output capacitance C
ob
― V
CB
= −10V, I
E
= 0, f = 1MHz ― 4 ― pF
Q2
Electrical Characteristics
(Ta = 25
°
C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
― V
CB
= 60V, I
E
= 0 ― ― 0.1 μA
Emitter cut-off current I
EBO
― V
EB
= 5V, I
C
= 0 ― ― 0.1 μA
DC current gain h
FE (Note)
― V
CE
= 6V, I
C
= 2mA 120 ― 400
Collector-emitter
saturation voltage
V
CE (sat)
― I
C
= 100mA, I
B
= 10mA ― 0.1 0.25
V
Transition frequency f
T
― V
CE
= 10V, I
C
= 1mA ― 150 ― MHz
Collector output capacitance C
ob
― V
CB
= 10V, I
E
= 0, f = 1MHz ― 2 ― pF
Note: h
FE
Classification Y (Y): 120 to 240, GR (G): 200 to 400
( ) Marking Symbol
