ZABG4003JA16TC Datasheet ZABG4003JA16TC | P1-P3

ZABG4003

Document number: DS38915 Rev. 1 - 2

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ZABG4003

4 STAGE FET LNA BIAS CONTROLLER

Summary

The ZABG4003 is an advanced GaAs and HEMT FETs bias controller designed to operate from minimal supply rails and intended primarily for

satellite Low Noise Blocks (LNBs). With the addition of one capacitor and two resistors, the ZABG4003 provides drain voltage and current control

for up to 4 external grounded source FETs. Generating the regulated negative rail required for FET gate biasing whilst operating from a single

supply of 2.1V to 5V. The -2V negative bias can also be used to supply other external circuits. Setting drain currents on the ZABG4003 uses two

resistors to split control between two pairs of FETs. This allows the operating current of input FETs to be adjusted to minimize noise, whilst the

following FET stages can separately be adjusted for maximum gain.

Features

 Provides Bias for up to 4 GaAs and HEMT FETs

 Operating Range of 2.1V to 5V

 Ultra-low Operating Current of 0.95mA

 Dynamic FET Protection

 Amplifier FET Drain Current Selectable (4mA to 15mA)

 Regulated Negative Rail Generator Requires only 1 External

Capacitor

 Expended Temperature Range of -40°C to +105°C

 U-QFN3030-16 (Type B) Surface Mount Package

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

Applications

 Low Power LNB’s

 Digital LNB’s

 IP LNB’s

 Twin LNB’s and Quad LNB’s

 General Purpose LNA Bias

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

Twin LNB System Diagrams

ZABG4003

Document number: DS38915 Rev. 1 - 2

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ZABG4003

Device Description

The ZABG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs with

a minimum of external components whilst operating from a minimal voltage supply and using minimal current.

The ZABG4003 has four FET bias stages that can be programmed to provide a constant drain current. Programming of the FET bias stage

arrangement and the operating currents of each FET group is achieved by resistors connected to the R

CAL1

and R

CAL2

pins, allowing input FETs to

be biased for optimum noise, amplifier FETs for optimum gain. Amplifier FETs can be operated at currents in the range 4 to 15mA. D1 and D3 on

the ZABG4003 can be programmed with R

CAL1

over the range of 4 to 15mA and D2 and D4 are programmed with R

CAL2

Drain voltages of amplifier stages are set at 2.0V and are current limited to approximately current set by their associated R

CAL

resistors.

Depletion mode FETs require a negative voltage bias supply when operated in grounded source circuits. The ZABG4003 includes an integrated

switched capacitor DC-DC converter generating a regulated output of -2V to allow single supply operation. The ZABG4003 has been designed to

be used with supply rails of 2.1V to 5.0V and the V

range has been extended to 5.5V to allow for 10% supply variation.

It is possible to use less than the full complement of FET bias controls, unused drain and gate connections can be left open circuit without

affecting operation of the remaining bias circuits.

To protect the external FETs the circuits have been designed to ensure that, under any conditions including power up/down transients, the gate

drive from the bias circuits cannot exceed -2.5V. Additionally each stage has its own individual current limiter. Furthermore if the negative rail

experiences a fault condition, such as overload or short circuit, the drain supply to the FETs will be limited, avoiding excessive current flow.

The ZABG4003 is available in the 16 pin U-QFN3030-16 (Type B) package.

Device operating temperature is -40°C to +105°C to suit a wide range of environmental conditions.

ZABG4003

Document number: DS38915 Rev. 1 - 2

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ZABG4003

Pin Assignments and Descriptions

(Top View)

Gnd

CAL1

D3V

D1G1

CAL2

SUB

NC NC

Gnd

16 15

8765

U-QFN3030-16 (Type B)

Pin Number

Pin Name

Description

Drain GaAs FET 2

Gate GaAs FET 2

3, 5, 6

No Connection

Gnd

Ground

SUB

Negative rail reservoir capacitor

CAL2

Drain current setting for D2 and D4

CAL1

Drain current setting for D1 and D3

Gate GaAs FET 4

Drain GaAs FET 4

Gate GaAs FET 3

Drain GaAs FET 3

Supply voltage

Drain GaAs FET 1

Gate GaAs FET 1

Pad

Gnd

Ground connection recommended or no connection

Maximum Ratings

Symbol

Parameter

Rating

Unit

Supply Voltage

-0.6 to +6

Supply Current

100

—

Power Dissipation U-QFN3030-16 (Type B)

650

Junction Temperature

+135

°C

STG

Storage Temperature Range

-40 to +150

°C

P1-P3 P4-P6 P7-P9

ZABG4003JA16TC

Mfr. #:

Buy ZABG4003JA16TC

Manufacturer:

Diodes Incorporated

Description:

Power Management Specialized - PMIC 4 Stage FET LNA BIAS Controller

Lifecycle:

New from this manufacturer.

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ZABG4003JA16TC