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PTVS12VP1UP,115

P1-P3P4-P6P7-P9P10-P12P13-P13
PTVSXP1UP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 6 January 2011 3 of 12
NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
5. Limiting values
[1] In accordance with IEC 61643-321 (10/1000 μs current waveform).
[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
[2] Soldering point of cathode tab.
6. Thermal characteristics
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[4] Soldering point of cathode tab.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
PPM
rated peak pulse power
[1]
-600W
I
PPM
rated peak pulse current
[1]
-see
Table 9
and 10
I
FSM
Non-repetitive peak
forward current
single half-sine
wave; t
p
=8.3ms
-100A
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
Table 6. ESD maximum ratings
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per diode
V
ESD
electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2]
-30kV
Table 7. ESD standards compliance
Standard Conditions
Per diode
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
Table 8. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--200K/W
[2]
--120K/W
[3]
--60K/W
R
th(j-sp)
thermal resistance from
junction to solder point
[4]
--12K/W
PTVSXP1UP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 6 January 2011 4 of 12
NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
7. Characteristics
Table 9. Characteristics per type; PTVS3V3P1UP to PTVS7V0P1UP
T
j
=25
°
C unless otherwise specified.
Type number Reverse standoff
voltage
V
RWM
(V)
Breakdown voltage
V
BR
(V)
Reverse leakage
current
I
RM
(μA)
Clamping voltage
V
CL
(V)
I
R
=10mA at V
RWM
(V)
Max Min Typ Max Typ Max Max I
PPM
(A)
PTVS3V3P1UP 3.3 5.20 5.60 6.00 5 600 8.0 75.0
PTVS5V0P1UP 5.0 6.40 6.70 7.00 5 400 9.2 65.2
PTVS6V0P1UP 6.0 6.67 7.02 7.37 5 400 10.3 58.3
PTVS6V5P1UP 6.5 7.22 7.60 7.98 5 250 11.2 53.6
PTVS7V0P1UP 7.0 7.78 8.20 8.60 3 100 12.0 50.0
Table 10. Characteristics per type; PTVS7V5P1UP to PTVS64VP1UP
T
j
=25
°
C unless otherwise specified.
Type number Reverse standoff
voltage
V
RWM
(V)
Breakdown voltage
V
BR
(V)
Reverse leakage
current
I
RM
(μA)
Clamping voltage
V
CL
(V)
I
R
=1mA at V
RWM
(V)
Max Min Typ Max Typ Max Max I
PPM
(A)
PTVS7V5P1UP 7.5 8.33 8.77 9.21 0.2 50 12.9 46.5
PTVS8V0P1UP 8.0 8.89 9.36 9.83 0.03 25 13.6 44.1
PTVS8V5P1UP 8.5 9.44 9.92 10.40 0.01 10 14.4 41.7
PTVS9V0P1UP 9.0 10.00 10.55 11.10 0.005 5 15.4 39.0
PTVS10VP1UP 10 11.10 11.70 12.30 0.005 2.5 17.0 35.3
PTVS11VP1UP 11 12.20 12.85 13.50 0.005 2.5 18.2 33.0
PTVS12VP1UP 12 13.30 14.00 14.70 0.005 2.5 19.9 30.2
PTVS13VP1UP 13 14.40 15.15 15.90 0.001 0.1 21.5 27.9
PTVS14VP1UP 14 15.60 16.40 17.20 0.001 0.1 23.2 25.9
PTVS15VP1UP 15 16.70 17.60 18.50 0.001 0.1 24.4 24.6
PTVS16VP1UP 16 17.80 18.75 19.70 0.001 0.1 26.0 23.1
PTVS17VP1UP 17 18.90 19.90 20.90 0.001 0.1 27.6 21.7
PTVS18VP1UP 18 20.00 21.00 22.10 0.001 0.1 29.2 20.5
PTVS20VP1UP 20 22.20 23.35 24.50 0.001 0.1 32.4 18.5
PTVS22VP1UP 22 24.40 25.60 26.90 0.001 0.1 35.5 16.9
PTVS24VP1UP 24 26.70 28.10 29.50 0.001 0.1 38.9 15.4
PTVS26VP1UP 26 28.90 30.40 31.90 0.001 0.1 42.1 14.3
PTVS28VP1UP 28 31.10 32.80 34.40 0.001 0.1 45.4 13.2
PTVS30VP1UP 30 33.30 35.10 36.80 0.001 0.1 48.4 12.4
PTVS33VP1UP 33 36.70 38.70 40.60 0.001 0.1 53.3 11.3
PTVS36VP1UP 36 40.00 42.10 44.20 0.001 0.1 58.1 10.3
PTVS40VP1UP 40 44.40 46.80 49.10 0.001 0.1 64.5 9.3
PTVSXP1UP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 6 January 2011 5 of 12
NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
PTVS43VP1UP 43 47.80 50.30 52.80 0.001 0.1 69.4 8.6
PTVS45VP1UP 45 50.00 52.65 55.30 0.001 0.1 72.7 8.3
PTVS48VP1UP 48 53.30 56.10 58.90 0.001 0.1 77.4 7.8
PTVS51VP1UP 51 56.70 59.70 62.70 0.001 0.1 82.4 7.3
PTVS54VP1UP 54 60.00 63.15 66.30 0.001 0.1 87.1 6.9
PTVS58VP1UP 58 64.40 67.80 71.20 0.001 0.1 93.6 6.4
PTVS60VP1UP 60 66.70 70.20 73.70 0.001 0.1 96.8 6.2
PTVS64VP1UP 64 71.10 74.85 78.60 0.001 0.1 103.0 5.8
Table 10. Characteristics per type; PTVS7V5P1UP to PTVS64VP1UP
…continued
T
j
=25
°
C unless otherwise specified.
Type number Reverse standoff
voltage
V
RWM
(V)
Breakdown voltage
V
BR
(V)
Reverse leakage
current
I
RM
(μA)
Clamping voltage
V
CL
(V)
I
R
=1mA at V
RWM
(V)
Max Min Typ Max Typ Max Max I
PPM
(A)
P1-P3P4-P6P7-P9P10-P12P13-P13

PTVS12VP1UP,115

Mfr. #:
Buy PTVS12VP1UP,115
Manufacturer:
Nexperia
Description:
TVS Diodes / ESD Suppressors UNI 1CH 14V 30.2A
Lifecycle:
New from this manufacturer.
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