BC307B_J35Z

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

BC307/308/309

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25°C unless otherwise noted

Symbol Parameter Value Units

V

CES

Collector-Emitter Voltage

: BC307

: BC308/309

-50

-30

V

V

V

CEO

Collector-Emitter Voltage

: BC307

: BC308/309

-45

-25

V

V

V

EBO

Emitter-Base Voltage -5 V

I

C

Collector Current (DC) -100 mA

P

C

Collector Power Dissipation 500 mW

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 ~ 150 °C

BC307/308/309

Switching and Amplifier Applications

• Low Noise: BC309

1. Collector 2. Base 3. Emitter

TO-92

1

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

BC307/308/309

Electrical Characteristics T

a

=25°C unless otherwise noted

h

FE

Classification

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CEO

Collector-Emitter Breakdown Voltage

: BC307

: BC308/309

I

C

= -2mA, I

B

=0

-45

-25

V

V

BV

CES

Collector-Emitter Breakdown Voltage

: BC307

: BC308/309

I

C

= -10µA, V

BE

=0

-50

-30

V

V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= -10µA, I

C

=0 -5 V

I

CES

Collector Cut-off Current

: BC307

: BC308/309

V

CE

= -45V, V

BE

=0

V

CE

= -25V, V

BE

= 0

-2

-2

-15

-15

nA

nA

h

FE

DC Current Gain V

CE

= -5V, I

C

= -2mA 120 8 0 0

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= -10mA, I

B

= -0.5mA

I

C

= -100mA, I

B

= -5mA

-0.5

-0.3 V

V

V

BE

(sat) Collector-Base Saturation Voltage I

C

= -10mA, I

B

= -0.5mA

I

C

= -100mA, I

B

= -5mA

-0.7

-0.85

V

V

V

BE

(on) Base-Emitter On Voltage V

CE

= -5V, I

C

= -2mA -0.55 -0.62 -0.7 V

f

T

Current Gain Bandwidth Product V

CE

= -5V, I

C

= -10mA, f=50MHz 130 MHz

C

ob

Output Capacitance V

CB

= -10V, I

E

=0, f=1MHz 6 pF

C

ib

Input Capacitance V

EB

= -0.5V, I

C

=0, f=1MHz 12 pF

NF Noise Figure

: BC307/308

: BC309

: BC309

V

CE

= -5V, I

C

= -0.2mA,

R

G

=2KΩ, f=1KHz

V

CE

= -5V, I

C

= -0.2mA

R

G

=2KΩ, f=30~15KHz

2

10

4

4

dB

dB

dB

Classification A B C

h

FE

120 ~ 220 180 ~ 460 380 ~ 800

©2002 Fairchild Semiconductor Corporation

BC307/308/309

Rev. A2, August 2002

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter Capacitance

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

-2 -4 -6 -8 -10 -12 -14 -16 -18 -20

-5

-10

-15

-20

-25

-30

-35

-40

-45

-50

I

B

= -50µA

I

B

= -100µA

I

B

= -150µA

I

B

= -200µA

I

B

= -250

µ

A

I

B

= -300µA

I

B

= -350µA

I

B

= -400µA

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

-0.1 -1 -10 -100

1

10

100

1000

V

CE

= -5V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

-0.1 -1 -10 -100

-0.01

-0.1

-1

-10

I

C

= -10 I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

-0.1

-1

-10

-100

V

CE

= -5V

I

C

[mA], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

-1 -10 -100

1

10

f=1MHz

I

E

= 0

C

ob

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

-1 -10

10

100

1000

V

CE

= -5V

f

T

[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

I

C

[mA], COLLECTOR CURRENT

BC307B_J35Z

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TRANS PNP 45V 0.1A TO-92

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