STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 75 V
V
GS
Gate-source voltage ± 20 V
I
D
(1)
1. Current limited by package
Drain current (continuous) at T
C
= 25°C 120 A
I
D
(1)
Drain current (continuous) at T
C
= 100°C 120 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 480 A
P
TOT
Total dissipation at T
C
= 25°C 330 W
Derating factor 2.2 W/°C
dv/dt
(3)
3. I
SD
< 120A, di/dt < 1100 A/µs, V
DD
< 60V, T
J
< T
JMAX
Peak diode recovery voltage slope 20 V/ns
E
AS
(4)
4. Starting TJ = 25°C, I
D
= 60A, V
DD
= 25V
Single pulse avalanche energy 600 mJ
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 175 °C
Table 3. Thermal resistance
Symbol Parameter
Value
Unit
TO-220 TO-247 D²PAK
Rthj-case Thermal resistance junction-case max 0.45 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 50 -- °C/W
Rthj-pcb
(1)
1. When mounted on 1 inch² FR4 2 oz Cu
Thermal resistance junction-pcb -- -- 50 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
