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STW160N75F3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3
4/16
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 250µA, V
GS
= 0
75 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max
rating,@125°C
10
100
µA
µA
I
GSS
Gate body leakage
current (V
DS
= 0)
V
GS
= ±20V
±200 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
24V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 60A
TO-220
TO-247
D²PAK
3.5
3.2
4
3.7
mΩ
mΩ
Table 5. Dynamic
Symbol Parameter Test conditions Min Typ Max Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
6750
1080
40
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=37.5V, I
D
= 120A
V
GS
=10V
(see Figure 16)
85
27
26
nC
nC
nC
STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical characteristics
5/16
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
=37.5 V, I
D
= 60A,
R
G
=4.7Ω, V
GS
=10V,
(see Figure 18)
22
65
100
15
ns
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse with limited by safe operating area
Source-drain current
Source-drain current (pulsed)
120
480
A
A
V
SD
(2)
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
I
SD
=120A, V
GS
=0
1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=120A, V
DD
= 20 V,
di/dt = 100 A/µs, Tj=25°C
(see Figure 17)
70
150
4.2
ns
nC
A
Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3
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2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 /
TO-247
Figure 3. Thermal impedance for TO-220 /
TO-247
Figure 4. Safe operating area for D²PAK Figure 5. Thermal impedance for D²PAK
Figure 6. Output characteristics Figure 7. Transfer characteristics
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

STW160N75F3

Mfr. #:
Buy STW160N75F3
Manufacturer:
STMicroelectronics
Description:
MOSFET 75V 3.5m 120A N-Channel
Lifecycle:
New from this manufacturer.
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