IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN170N65X2
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 170 A
I
SM
Repetitive, Pulse Width Limited by T
JM
680 A
V
SD
I
F
= 100A, V
GS
= 0V, Note 1 1.4 V
t
rr
270 ns
Q
RM
3.1 μC
I
RM
22.6 A
I
F
= 85A, -di/dt = 100A/s
V
R
= 100V, V
GS
= 0V
SOT-227B (IXFN) Outline
(M4 screws (4x) supplied)
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 55 90 S
R
Gi
Gate Input Resistance 0.56
C
iss
27.0 nF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 15.8 nF
C
rss
12.4 pF
C
o(er)
780 pF
C
o(tr)
3400 pF
t
d(on)
60 ns
t
r
15 ns
t
d(off)
133 ns
t
f
6 ns
Q
g(on)
434 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
166 nC
Q
gd
137 nC
R
thJC
0.107 C/W
R
thCS
0.05 C/W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1(External)
Effective Output Capacitance
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
