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NTMS4503NR2

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 2
1 Publication Order Number:
NTMS4503N/D
NTMS4503N
Power MOSFET
28 V, 14 A, N−Channel, SOIC−8
Features
• Low R
DS(on)
• High Power and Current Handling Capability
• Low Gate Charge
• Pb−Free Package is Available
Applications
• DC/DC Converters
• Motor Drives
• Synchronous Rectifier − POL
• Buck Low−Side
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
28 V
Gate−to−Source Voltage − Continuous V
GS
$20 V
Drain Current
Continuous @ T
A
= 25°C (Note 1)
Continuous @ T
A
= 25°C (Note 2)
Continuous @ T
A
= 25°C (Note 3)
Single Pulse (tp = 10 ms)
I
D
I
DM
14
12
9.0
40
A
Total Power Dissipation
T
A
= 25°C (Note 1)
T
A
= 25°C (Note 2)
T
A
= 25°C (Note 3)
P
D
2.5
1.66
0.93
W
Operating and Storage Temperature T
J
, T
stg
−55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 30 V, V
GS
= 10 V, I
L
= 12.2 A,
L = 1.0 mH, R
G
= 25 W)
E
AS
75 mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
THERMAL RESISTANCE RATINGS
Rating Symbol Value Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Junction−to−Ambient (Note 3)
R
q
JA
50
75
135
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area 0.412 in sq), t < 10 s.
2. Surface−mounted on FR4 board using 1″ pad size
(Cu area 1.127 in sq) steady state.
3. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area 0.412 in sq), steady state.
G
D
S
Device Package Shipping†
ORDERING INFORMATION
NTMS4503NR2 SOIC−8 2500/Tape & Ree
l
http://onsemi.com
28 V
8.8 mW @ 4.5 V
7.0 mW @ 10 V
R
DS(on)
Typ
14 A
I
D
Max
(Note 1)
V
(BR)DSS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specificatio
ns
Brochure, BRD8011/D.
SOIC−8
CASE 751
STYLE 12
MARKING DIAGRAM &
PIN ASSIGNMENT
4503N = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
4503N
AYWW G
G
1
8
SS SG
DD DD
(Note: Microdot may be in either location)
1
8
NTMS4503NR2G SOIC−8
(Pb−Free)
2500/Tape & Ree
l
NTMS4503N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
28 31 − V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
− − 22 − mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 24 V
T
J
= 25°C − − 1.0 mA
T
J
= 100°C − − 25
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= $20 V − − $100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 − 2.0 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
− − −5.0 − mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 14 A − 7.0 8.0 mW
V
GS
= 4.5 V, I
D
= 10 A − 8.8 9.8
Forward Transconductance g
FS
V
DS
= 10 V, I
D
= 14 A − 30 − S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 16 V
− 2400 −
pF
Output Capacitance C
OSS
− 1000 −
Reverse Transfer Capacitance C
RSS
− 375 −
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 16 V, I
D
= 10 A
− 23 −
nC
Threshold Gate Charge Q
G(TH)
− 2.0 −
Gate−to−Source Charge Q
GS
− 5.0 −
Gate−to−Drain Charge Q
GD
− 12 −
SWITCHING CHARACTERISTICS, V
GS
= V (Note 5)
Turn−On Delay Time t
d(ON)
V
GS
= 4.5 V, V
DD
= 16 V, I
D
= 10 A,
R
G
= 2.0 W
− 18.5 −
ns
Rise Time tr − 70 −
Turn−Off Delay Time t
d(OFF)
− 21 −
Fall Time t
f
− 23 −
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V, I
S
= 10 A
T
J
= 25°C − 0.82 1.2
V
T
J
= 125°C − 0.65 −
Reverse Recovery Time t
RR
V
GS
= 0 V,
d
ISD
/d
t
= 100 A/ms,
I
S
= 14 A
− 48 −
ns
Charge Time T
a
− 23 −
Discharge Time T
b
− 25 −
Reverse Recovery Charge Q
RR
− 25 − nC
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
NTMS4503N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
T
J
= 100°C
0
20
62
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
15
5
0
Figure 1. On−Region Characteristics
13
25
15
5
4
0
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.007
0.008
0.006
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (
W
)
I
D,
DRAIN CURRENT (AMPS)
0.006
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
1.4
1.2
1
0.8
0.6
50 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
0.011
35
T
J
= −55°C
I
D
= 14 A
T
J
= 25°C
0.012
0.004
75
T
J
= 25°C
I
D
= 14 A
V
GS
= 4.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
T
J
= 25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1.6
V
GS
= 10 V
111
10
18
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
14
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 150°C
T
J
= 100°C
2.2 V
0.009
V
GS
= 4.5 V
100
1000
10000
10
3 V
V
DS
≥ 10 V
0.010
16 20
0.008
12 16
2.8 V
10
2.4 V
10
2.5
7
9
48
12
2
0
30
25
2.6 V
V
GS
= 10, 3.6, 3.2 V
20
35
0.009
0.005
125100 2
8
3.5
0.011
0.010
0.007
10468
513 97
30
21.5
P1-P3P4-P5

NTMS4503NR2

Mfr. #:
Buy NTMS4503NR2
Manufacturer:
ON Semiconductor
Description:
MOSFET 28V 14A N-Channel
Lifecycle:
New from this manufacturer.
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