MMBT5551-7-F Datasheet MMBT5551-7-F, MMBT5551-7 | P1-P3

MMBT5551

160V NPN SMALL SIGNAL TRANSISTOR IN SOT23

Features

• BV

CEO

> 160V

• Ideal for Low Power Amplification and Switching

• Complementary PNP Type Available (MMBT5401)

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic, “Green” molding compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish-Matte Tin Plated Leads. Solderable per MIL-

STD-202, Method 208

• Weight: 0.008 grams (approximate)

Ordering Information (Note 4)

Part Number

Compliance

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

MMBT5551-7-F

AEC-Q101

K4N

7

8

3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2010

2011

2012

2013

2014

2015

2016

2017

Code

X

Y

Z

A

B

C

D

E

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Top View

Device Symbol

C

E

B

SOT23

C

E

B

Top View

Pin-Out

K4N = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: B = 2014)

M = Month (ex: 9 = September)

MMBT5551

Document number: DS30061 Rev. 12 - 2

1 of 6

www.diodes.com

August 2014

MMBT5551

Absolute Maximum Ratings (@T

A

= +25°C unless otherwise specified)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

180

V

Collector-Emitter Voltage

V

CEO

160

V

Emitter-Base Voltage

V

EBO

6.0

V

Collector Current - Continuous (Note 1)

I

C

600

mA

Thermal Characteristics (@T

A

= +25°C unless otherwise specified)

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

P

D

300

mW

Thermal Resistance, Junction to Ambient

(Note 5)

R

θ

JA

417

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

ESD Ratings (Note 6)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air

conditions whilst operating in a steady-state.

6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

0

50

100

25 50

75 100 125

150

175

200

P , POWER DISSIPATION (mW)

D

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Dissipation vs. Ambient Temperature

A

150

200

250

300

350

400

0

MMBT5551

Document number: DS30061 Rev. 12 - 2

2 of 6

www.diodes.com

August 2014

MMBT5551

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Collector-Base Breakdown Voltage

V

(BR)CBO

180



V

I

C

= 100µA, I

E

= 0

Collector-Emitter Breakdown Voltage

V

(BR)CEO

160



V

I

C

= 1.0mA, I

B

= 0

Emitter-Base Breakdown Voltage

V

(BR)EBO

6.0



V

I

E

= 10µA, I

C

= 0

Collector Cutoff Current

I

CBO



50

nA

µA

V

CB

= 120V, I

E

= 0

V

CB

= 120V, I

E

= 0, T

A

= 100

°

C

Emitter Cutoff Current

I

EBO



50

nA

V

EB

= 4.0V, I

C

= 0

ON CHARACTERISTICS (Note 7)

DC Current Gain

h

FE

80

30



250



I

C

= 1.0mA, V

CE

= 5.0V

I

C

= 10mA, V

CE

= 5.0V

I

C

= 50mA, V

CE

= 5.0V

Collector-Emitter Saturation Voltage

V

CE(SAT)



0.15

0.20

V

I

C

= 10mA, I

B

= 1.0mA

I

C

= 50mA, I

B

= 5.0mA

Base-Emitter Saturation Voltage

V

BE(SAT)



1.0 V

I

C

= 10mA, I

B

= 1.0mA

I

C

= 50mA, I

B

= 5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

obo



6.0

pF

V

CB

= 10V, f = 1.0MHz, I

E

= 0

Small Signal Current Gain

h

fe

50 250



V

CE

= 10V, I

C

= 1.0mA,

f = 1.0kHz

Current Gain-Bandwidth Product

f

T

100 300 MHz

V

CE

= 10V, I

C

= 10mA,

f = 100MHz

Noise Figure nF



8.0 dB

V

CE

= 5.0V, I

C

= 200µA,

R

S

= 1.0kΩ,

f = 1.0kHz

Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

MMBT5551

Document number: DS30061 Rev. 12 - 2

3 of 6

www.diodes.com

August 2014

MMBT5551-7-F

MMBT5551-7-F

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