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VSMY2940G

P1-P3P4-P6P7-P9
VSMY2940RG, VSMY2940G
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 02-Feb-15
1
Document Number: 84221
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 940 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLight
TM
portfolio, the VSMY2940 series
are infrared, 940 nm emitting diodes based on GaAlAs
surface emitter chip technology with extreme high radiant
intensities, high optical power and high speed, molded in
clear, untinted plastic packages (with lens) for surface
mounting (SMD).
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Emitter source for proximity sensors
• IR touch panels
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• Peak wavelength: λ
p
= 940 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity: ϕ = ± 10°
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reverse gullwing
• Package matches with detector VEMD2000X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
VSMY2940RG VSMY2940G
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) ϕ (deg) λ
P
(nm) t
r
(ns)
VSMY2940RG 120 ± 10 940 10
VSMY2940G 120 ± 10 940 10
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY2940RG Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VSMY2940G Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
VSMY2940RG, VSMY2940G
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 02-Feb-15
2
Document Number: 84221
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1A
Power dissipation P
V
190 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +85 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature acc. figure 10, J-STD-020 T
sd
260 °C
Thermal resistance junction/ambient J-STD-051, soldered on PCB R
thJA
250 K/W
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21890
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21891
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.55 1.9 V
I
F
= 1 A, t
p
= 100 μs V
F
2.65 V
Temperature coefficient of V
F
I
F
= 100 mA TK
VF
-2.1 mV/K
Reverse current I
R
not designed for reverse operation μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 mW/cm
2
C
J
125 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
65 120 195 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
880 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φ
e
55 mW
Temperature coefficient of radiant
power
I
F
= 100 mA TKφ
e
-0.2 %/K
Angle of half intensity ϕ ± 10 deg
Peak wavelength I
F
= 100 mA λ
p
920 940 960 nm
Spectral bandwidth I
F
= 30 mA Δλ 40 nm
Temperature coefficient of λ
p
I
F
= 30 mA TKλ
p
0.25 nm/K
Rise time I
F
= 100 mA, 20 % to 80 % t
r
10 ns
Fall time I
F
= 100 mA, 20 % to 80 % t
f
10 ns
VSMY2940RG, VSMY2940G
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 02-Feb-15
3
Document Number: 84221
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Forward Voltage vs. Ambient Temperature
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity vs. Wavelength
1
10
100
1000
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
t
p
= 100 μs
1.30
1.40
1.50
1.60
1.70
1.80
1.90
-60 -40 -20 0 20 40 60 80 100
V
F
- Forward Voltage (V)
T
amb
- Ambient Temperature (°C)
I
F
= 100 mA
90
95
100
105
110
115
120
-60 -40 -20 0 20 40 60 80 100
V
F, rel
- Relative Forward Voltage (%)
T
amb
- Ambient Temperature (°C)
I
F
= 100 mA
t
p
= 20 ms
0.1
1
10
100
1000
1 10 100 1000
I
e
- Radiant Intensity (mW/sr)
I
F
- Forward Current (mA)
t
p
= 100 μs
80
85
90
95
100
105
110
-60 -40 -20 0 20 40 60 80 100
I
e, rel
- Relative Radiant Intensity (%)
T
amb
- Ambient Temperature (°C)
I
F
= 100 mA
0
10
20
30
40
50
60
70
80
90
100
800 850 900 950 1000 1050
I
e, rel
- Relative Radiant Intensity (%)
λ - Wavelength (nm)
I
F
= 100 mA
P1-P3P4-P6P7-P9

VSMY2940G

Mfr. #:
Buy VSMY2940G
Manufacturer:
Vishay Semiconductors
Description:
Infrared Emitters - High Power SurfLight IR 940nm 120mW/sr 10 degree
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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