Switching Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
15 Vdc
Collector–Emitter Voltage V
CES
40 Vdc
Collector–Base Voltage V
CBO
40 Vdc
Emitter–Base Voltage V
EBO
4.5 Vdc
Collector Current — Continuous I
C
200 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
JA
200 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 10 mAdc, I
B
= 0) MPS2369A
V
(BR)CEO
15 — — Vdc
Collector–Emitter Breakdown Voltage
(I
C
= 10 µAdc, V
BE
= 0) MPS2369,A
V
(BR)CES
40 — — Vdc
Collector–Base Breakdown Voltage
(I
C
= 10 Adc, I
E
= 0) MPS2369,A
V
(BR)CBO
40 — — Vdc
Emitter–Base Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0) MPS2369,A
V
(BR)EBO
4.5 — — Vdc
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0)
(V
CB
= 20 Vdc, I
E
= 0, T
A
= 125°C) MPS2369,A
I
CBO
—
—
—
—
0.4
30
µAdc
Collector Cutoff Current
(V
CE
= 20 Vdc, V
BE
= 0) MPS2369,A
I
CES
— — 0.4 µAdc
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 2
1 Publication Order Number:
MPS2369/D
MPS2369
MPS2369A
*ON Semiconductor Preferred Device
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
1
2
3
*
COLLECTOR
3
2
BASE
1
EMITTER
