DS30068 Rev. 5 - 3 1 of 3 LLSD103A - 103C
www.diodes.com Diodes Incorporated
LLSD103A - 103C
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
• Low Forward Voltage Drop
• Guard Ring Construction for Transient Protection
• Fast Reverse Recovery Time
• Lead Free Finish, RoHS Compliant (Note 3)
• Case: MiniMELF
• Case Material: Glass. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish Sn97.5Ag2.5. Solderable per
MIL-STD-202, Method 208
• Polarity: Cathode Band
• Ordering Information: See Last Page
• Marking: Cathode Band Only
• Weight: 0.05 grams (approximate)
Mechanical Data
MiniMELF
Dim Min Max
A
3.30 3.70
B
1.30 1.60
C
0.28 0.50
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Note: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. EC Directive 2002/95/EC (RoHS) revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied where applicable,
see EU Directive Annex Notes 5 and 7.
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic Symbol LLSD103A LLSD103B LLSD103C Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40 30 20
V
RMS Reverse Voltage
V
R(RMS)
28 21 14
V
Forward Continuous Current (Note 1)
I
FM
350
mA
Repetitive Peak Forward Current @ t ≤ 1.0s
I
FRM
1.0 A
Non-Repetitive Peak Forward Surge Current @ t ≤ 1.0s
@ t = 10ms
I
FSM
1.5
7.5
A
Power Dissipation (Note 1)
P
d
400 mW
Thermal Resistance, Junction to Ambient Air (Note 1)
R
θJA
250 °C/W
Operating Temperature Range
T
j
-55 to +125 °C
Storage Temperature Range
T
STG
-55 to +150 °C
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage
V
F
0.37
0.60
V
I
F
= 20mA
I
F
= 200mA
Peak Reverse Current (Note 2) LLSD103A
LLSD103B
LLSD103C
I
R
5.0 µA
V
R
= 30V
V
R
= 20V
V
R
= 10V
Total Capacitance
C
T
50 pF
V
R
= 0V, f = 1.0MHz
Reverse Recovery Time
t
rr
10 ns
I
F
= I
R
= 50mA to 200mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
N
O
T
R
E
C
O
M
M
E
N
D
E
D
FO
R
N
E
W
D
E
S
I
G
N
S
P
L
E
A
S
E
U
S
E
S
D
1
0
3
A
W
-
S
D
1
0
3
C
W
