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VS-UFH60BA65

P1-P3P4-P6P7-P7
VS-UFH60BA65
www.vishay.com
Vishay Semiconductors
Revision: 25-Apr-2018
1
Document Number: 96135
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Insulated Single Phase Hyperfast Bridge
(Power Modules), 60 A
FEATURES
• Hyperfast and soft recovery characteristic
• Electrically isolated base plate
• Simplified mechanical designs, rapid assembly
• High operation junction temperature (T
J
max. = 175 °C)
• Designed and qualified for industrial and consumer level
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
V
RRM
650 V
I
O
at T
C
= 123 °C 60 A
t
rr
63 ns
Type Modules - Bridge, Hyperfast
Package SOT-227
Circuit configuration Single phase bridge
SOT-227
ABSOLUTE MAXIMUM RATINGS
SYMBOL CHARACTERISTICS VALUES UNITS
I
O
60 A
T
C
123 °C
I
FSM
50 Hz 360
A
60 Hz 377
I
2
t
50 Hz 648
A
2
s
60 Hz 589
V
RRM
650 V
T
J
-55 to +175 °C
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
MAXIMUM
AT T
J
MAXIMUM
mA
UFH60BA65 65 650 700 2
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
BR
I
R
= 250 μA 650 - -
V
Forward voltage, per diode V
FM
I
F
= 60 A - 1.7 2.35
Reverse leakage current, per leg I
RM
V
R
= 650 V - 1.0 100
μA
V
R
= 650 V, T
J
= 150 °C - 250 -
RMS isolation voltage base plate V
ISOL
f = 50 Hz, any terminal to case, t = 1 min 2500 - - V
VS-UFH60BA65
www.vishay.com
Vishay Semiconductors
Revision: 25-Apr-2018
2
Document Number: 96135
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum DC output current
at case temperature
I
O
Resistive or inductive load 60 A
123 °C
Maximum peak, one-cycle
non-repetitive forward current
I
FSM
t = 10 ms
No voltage
reapplied
Initial T
J
= 25 °C
360
A
t = 8.3 ms 377
t = 10 ms
100 % V
RRM
reapplied
303
t = 8.3 ms 317
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
648
A
2
s
t = 8.3 ms 589
t = 10 ms
100 % V
RRM
reapplied
458
t = 8.3 ms 417
Maximum I
2
t for fusing I
2
tI
2
t for time t
x
= I
2
t x t
x
0.1 t
x
10 ms, V
RRM
= 0 V 6.4 kA
2
s
Low level of threshold voltage, per leg V
F(T0)1
(16.7 % x x I
F(AV)
) < I < x I
F(AV)
, T
J
= T
J
maximum
16.49 V
Low level value of forward slope resistance r
f1
0.88 m
High level of threshold voltage, per leg V
F(T0)2
(I > x I
F(AV)
), T
J
= T
J
maximum
15.87 V
High level value of forward slope resistance r
f2
1.16 m
Maximum forward voltage, per diode V
FM
I
F
= 60 A 2.35 V
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical reverse recovery time, per diode t
rr
T
J
= 25 °C, I
F
= 50 A, V
R
= 200 V,
dI
F
/dt = 200 A/μs
63
ns
T
J
= 125 °C, I
F
= 50 A, V
R
= 200 V,
dI
F
/dt = 200 A/μs
134
Typical reverse recovery current, per diode I
rr
T
J
= 25 °C, I
F
= 50 A, V
R
= 200 V,
dI
F
/dt = 200 A/μs
4.1
A
T
J
= 125 °C, I
F
= 50 A, V
R
= 200 V,
dI
F
/dt = 200 A/μs
11.4
Typical reverse recovery charge, per diode Q
rr
T
J
= 25 °C, I
F
= 50 A, V
R
= 200 V,
dI
F
/dt = 200 A/μs
130
nC
T
J
= 125 °C, I
F
= 50 A, V
R
= 200 V,
dI
F
/dt = 200 A/μs
765
Typical junction capacitance C
T
V
R
= 650 V 77 pF
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range T
J
, T
Stg
-55 - 175 °C
Thermal resistance junction to case R
thJC
- - 0.91
°C/W
Thermal resistance case to heatsink R
thCS
Flat, greased surface - 0.1 -
Weight -30- g
Mounting torque
Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.3 (11.5) Nm (lbf.in)
Case style SOT-227
I
FM
t
rr
dI
R
dt
I
RM(REC)
Q
rr
t
VS-UFH60BA65
www.vishay.com
Vishay Semiconductors
Revision: 25-Apr-2018
3
Document Number: 96135
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Characteristics
Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Diode)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
(Per Diode)
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Current Rating Characteristics (A)
Fig. 6 - Typical Reverse Recovery Current vs. dI
F
/dt
0
50
100
150
200
250
300
0 0.51.01.52.02.53.0
I
F
(A)
Instantaneous Forward Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
T
J
= 175 °C
0.00001
0.0001
0.001
0.01
0.1
1
50 150 250 350 450 550 650
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
10
100
1000
10 100 1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
T
J
= 25 °C
0
50
100
150
200
250
0 102030405060
Average Power Loss (W)
Average Forward Current (A)
180°
Sine
180°
Rect
0
20
40
60
80
100
120
140
160
180
0 25 50 75 100 125
Maximum Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
180 °C
Rect
180 °C
Sine
0
5
10
15
20
25
100 200 300 400 500
I
rr
(A)
dI
F
/dt (A/μs)
T
J
= 125 °C
T
J
= 25 °C
V
R
= 200 V
I
F
= 50 A
P1-P3P4-P6P7-P7

VS-UFH60BA65

Mfr. #:
Buy VS-UFH60BA65
Manufacturer:
Vishay
Description:
Discrete Semiconductor Modules Pwr Mod 60A; 650V Single Phase SOT-227
Lifecycle:
New from this manufacturer.
Delivery:
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