IPB180P04P4L02ATMA1

Final Data Sheet IPB180P04P4L-02
13 Typ. gate charge 14 Gate charge waveforms
V
GS
= f(Q
gate
); I
D
= -180A pulsed
parameter: V
DD
-32V
-8V
0
2
4
6
8
10
12
0 50 100 150 200
Q
gate
[nC]
-V
GS
[V]
V
GS
Q
gate
Q
gs
Q
gd
Q
g
V
GS
Q
gate
Q
gs
Q
gd
Q
g
Rev. 1.3 page 7 2011-04-27
Final Data Sheet IPB180P04P4L-02
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2011
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (
www.infineon.com
).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.3 page 8 2011-04-27
Final Data Sheet IPB180P04P4L-02
Revision History
Version
1.1
1.1
1.2
1.2
1.2
1.3
Date
02.09.2009
02.09.2009
07.10.2009
07.10.2009
07.10.2009
27.04.2011
V
SD
: I
D
changed to 80A
Changes
R
DS(on)
@4.5V: Id changed to 135A
Final Data Sheet
V
GS(th)
: I
D
changed to 410uA
R
DS(on)
@4.5V: I
D
changed to 80A
R
DS(on)
@10V: I
D
changed to 80A
Rev. 1.3 page 9 2011-04-27

IPB180P04P4L02ATMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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