APTC60HM35T3G
APTC60HM35T3G – Rev 3 November, 2017
www.microsemi.com
5-7
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
T
J
, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DSS
, Drain to Source Breakdown
Voltage (Normalized)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125 150
T
J
, Junction Temperature (°C)
R
DS
(on), Drain to Source ON resistance
(Normalized)
V
GS
=10V
I
D
= 72A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
T
C
, Case Temperature (°C)
V
GS
(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
10 ms
1 ms
100 µs
1
10
100
1000
1 10 100 1000
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
limited b
R
on
Single pulse
T
J
=150°C
T
C
=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0 1020304050
V
DS
, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
V
DS
=120V
V
DS
=300V
V
DS
=480V
0
2
4
6
8
10
12
14
0 100 200 300 400 500 600
Gate Charge (nC)
V
GS
, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
I
D
=72A
T
J
=25°C