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MMBD7000LT1HTSA1

P1-P3P4-P6
2007-03-28
1
SMBD7000/MMBD7000...
Silicon Switching Diode Array
• For high-speed switching applications
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
SMBD7000/MMBD7000
!
,
,
Type Package Configuration Marking
SMBD7000/MMBD7000 SOT23 series s5C
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Value Unit
Diode reverse voltage V
R
100 V
Peak reverse voltage V
RM
100
Forward current I
F
200 mA
Non-repetitive peak surge forward current
t = 1 µs
t = 1 s
I
FSM
4.5
0.5
A
Total power dissipation
T
S
≤ 28°C
P
tot
330 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
2)
SMBD7000/MMBD7000
R
thJS
≤ 360
K/W
1
Pb-containing package may be available upon special request
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2007-03-28
2
SMBD7000/MMBD7000...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 µA
V
(BR)
100 - - V
Reverse current
V
R
= 50 V
V
R
= 100 V
V
R
= 50 V, T
A
= 150 °C
I
R
-
-
-
-
-
-
0.3
0.5
100
µA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
550
670
-
750
-
-
-
-
-
-
700
820
1000
1100
1250
mV
AC Characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
- - 2 pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, measured at I
R
= 1mA,
R
L
= 100 Ω
t
rr
- - 4 ns
Test circuit for reverse recovery time
EHN00019
Ι
F
D.U.T.
Oscillograph
Pulse generator: t
p
= 100ns, D = 0.05, t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph: R = 50Ω, t
r
= 0.35ns, C ≤ 1pF
2007-03-28
3
SMBD7000/MMBD7000...
Reverse current I
R
= ƒ (T
A
)
V
R
= Parameter
0 25 50 75 100
°C
150
T
A
1
10
2
10
3
10
4
10
5
10
nA
I
R
70 V
25 V
Forward Voltage V
F
= ƒ (T
A
)
I
F
= Parameter
0
0.5
1.0
0 50 100 150
SMBD 7000 EHB00139
V
T
A
V
F
˚C
Ι
F
= 100 mA
10 mA
1 mA
0.1 mA
Forward current I
F
= ƒ (V
F
)
T
A
= 25°C
0
0
EHB00137SMBD 7000
Ι
0.5 1.0 V 1.5
50
100
mA
150
F
F
V
maxtyp
Forward current I
F
= ƒ (T
S
)
SMBD7000/MMBD7000
0 15 30 45 60 75 90 105 120
°C
150
T
S
0
25
50
75
100
125
150
175
200
mA
250
I
F
P1-P3P4-P6

MMBD7000LT1HTSA1

Mfr. #:
Buy MMBD7000LT1HTSA1
Manufacturer:
Infineon Technologies
Description:
Diodes - General Purpose, Power, Switching AF DIODE 100V 0.2A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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