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FYAF3045DNTU

P1-P3P4-P4
©2002 Fairchild Semiconductor Corporation Rev. A, September 2002
FYAF3045DN
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings T
C
=25°
°°
°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics
(per diode)
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Symbol Parameter Value Units
V
RRM
Maximum Repetitive Reverse Voltage 45 V
V
R
Maximum DC Reverse Voltage 45 V
I
F(AV)
Average Rectified Forward Current @ T
C
= 105°C30 A
I
FSM
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
300 A
T
J,
T
STG
Operating Junction and Storage Temperature -65 to +150 °C
Symbol Parameter Value Units
R
θJC
Maximum Thermal Resistance, Junction to Case (per diode) 2.2 °C/W
Symbol Parameter Value Units
V
FM
*
Maximum Instantaneous Forward Voltage
I
F
= 15A
I
F
= 15A
I
F
= 30A
I
F
= 30A
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
0.55
0.49
0.70
0.65
V
I
RM
*
Maximum Instantaneous Reverse Current
@ rated V
R
T
C
= 25 °C
T
C
= 125 °C
1
120
mA
FYAF3045DN
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
TO-3PF
1 2 3
1. Anode 2.Cathode 3. Anode
©2002 Fairchild Semiconductor Corporation Rev. A, September 2002
FYAF3045DN
Typical Characteristics
Figure 1. Typical Forward Voltage Characteristics
(per diode)
Figure 3. Typical Junction Capacitance
(per diode)
Figure 5. Forward Current Derating Curve
Figure 2. Typical Reverse Current
vs. Reverse Voltage (per diode)
Figure 4. Thermal Impedance Characteristics
(per diode)
Figure 6. Non-Repetive Surge Current
(per diode)
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5
T
J
=125
o
C
T
J
=75
o
C
T
J
=25
o
C
Forward Voltage Drop, V
F
[V]
Forward Current, I
F
[A]
0 10203040
200
300
400
500
600
700
800
900
1000
2000
T
J
=25
o
C
Juntion Capacitance, C
J
[pF]
Reverse Voltage, V
R
[V]
0 20 40 60 80 100 120 140 160
0
5
10
15
20
25
30
35
DC
Average Forward Current, I
F(AV)
[A]
Case Temperature, T
C
[
o
C]
0 10203040
1E-3
0.01
0.1
1
10
100
T
J
=150
o
C
T
J
=125
o
C
T
J
=75
o
C
T
J
=25
o
C
Reverse Current, I
R
[mA]
Reverse Voltage, V
R
[V]
100µ 1m 10m 100m 1 10
0.1
1
10
Transient Thermal Impedance [
o
C/W]
Pulse Duration [s]
1 10 100
0
50
100
150
200
250
300
350
Max. Forward Surge Current, I
FSM
[A]
Number of Cycles @ 60Hz
©2002 Fairchild Semiconductor Corporation Rev. A, September 2002
FYAF3045DN
Package Dimensions
Dimensions in Millimeters
15.50
±0.20
ø3.60
±0.20
26.50
±0.20
4.50
±0.20
10.00
±0.20
16.50
±0.20
10°
16.50
±0.20
22.00
±0.20
23.00
±0.20
1.50
±0.20
14.50
±0.20
2.00
±0.20
2.00
±0.20
2.00
±0.20
0.85
±0.03
2.00
±0.20
5.50
±0.20
3.00
±0.20
(1.50)
3.30
±0.20
2.00
±0.20
4.00
±0.20
2.50
±0.20
14.80
±0.20
3.30
±0.20
2.00
±0.20
5.50
±0.20
0.75
+0.20
–0.10
0.90
+0.20
–0.10
5.45TYP
[5.45
±0.30
]
5.45TYP
[5.45
±0.30
]
TO-3PF
P1-P3P4-P4

FYAF3045DNTU

Mfr. #:
Buy FYAF3045DNTU
Manufacturer:
ON Semiconductor / Fairchild
Description:
Schottky Diodes & Rectifiers Schottky Barrier
Lifecycle:
New from this manufacturer.
Delivery:
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